Evidence map›Paper›PMID 41942433›Full record

ArticleNature communications2026

Solution epitaxy of single-crystal ferroelectric p-i-n structure with ultrahigh photovoltaic response.

Zihang Huang, Zijun Zhang, Wan-Rong Geng, Wenbo Ma, Yuyang Li, Zhanqi Zhou, Yi Fu, Ruian Zhang, Yiran Sun, Xuchao Fang and 16 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

26 authors.

Zihang Huang *State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.ORCID http://orcid.org/0009-0004-6396-2925
Zijun Zhang *Center of Electron Microscopy, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
Wan-Rong Geng *Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, China.ORCID http://orcid.org/0000-0003-4295-2483
Wenbo MaState Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, China.ORCID http://orcid.org/0000-0002-2209-4752
Yuyang LiState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
Zhanqi ZhouCenter of Electron Microscopy, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
Yi FuState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
Ruian ZhangState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.ORCID http://orcid.org/0000-0002-3893-8286
Yiran SunState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.ORCID http://orcid.org/0009-0001-7879-6681
Xuchao FangState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
Xuanyu JiangState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.ORCID http://orcid.org/0000-0001-5307-0393
Qin XiongState Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, China.
Xiayi LvDepartment of Thoracic Surgery, The First Affiliated Hospital, School of Medicine, Zhejiang University, Hangzhou, China.
Guanshihan DuState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
Shangqing LiState Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, China.
Yanjun FangState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.ORCID http://orcid.org/0000-0003-4401-2313
Yang Michael YangState Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, China.ORCID http://orcid.org/0000-0002-3362-7155
Yuhui HuangState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.ORCID http://orcid.org/0000-0001-7493-0487
Xiu-Liang MaBay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, China.ORCID http://orcid.org/0000-0001-7143-2044
Yongjun WuState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
Kaihui LiuState Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.ORCID http://orcid.org/0000-0002-8781-2495
Zijian HongState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China. hongzijian100@zju.edu.cn.ORCID http://orcid.org/0000-0002-3491-0884
Tianqi DengState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China. dengtq@zju.edu.cn.ORCID http://orcid.org/0000-0002-9826-7138
He TianCenter of Electron Microscopy, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China. hetian@zju.edu.cn.ORCID http://orcid.org/0000-0003-2108-3100
Gaorong HanState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China. hgr@zju.edu.cn.ORCID http://orcid.org/0000-0002-7027-5478
Zhaohui RenState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China. renzh@zju.edu.cn.ORCID http://orcid.org/0000-0002-9109-8773

Funding

National Natural Science Foundation of China (National Science Foundation of China) 12504026National Natural Science Foundation of China (National Science Foundation of China) 52272129National Natural Science Foundation of China (National Science Foundation of China) 92166104National Natural Science Foundation of China (National Science Foundation of China) T25B2006
6 · The paper itself

Abstract

Ferroelectric materials with a switchable polarization are appealing for optoelectronic applications because of their above-bandgap photovoltage with a potential to exceed the Shockley-Queisser limit efficiency within classic p-n junctions. However, the intrinsic photovoltaic current in ferroelectrics remains far below the junction ones by orders, hindering their practical applications. Here we report an extremely large photovoltaic current density of 130 mA cm

Identifiers

PMID41942433
PMCPMC13230585

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.