Evidence map›Paper›PMID 41942348›Full record

ArticleACS nano2026

Dimensional Scaling Effect in Percolative Oxide Semiconductor Transistors.

Robert Tseng, Yi-Hou Kuo, Yi-Yu Pan, Zheng-Hong Li, Sung-Tsun Wang, Ciao-Fen Chen, Shun-Tsung Lo, Yu-Cheng Chan, Ya-Jing Wu, Shih-Chieh Chen and 10 more

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In one paragraph

Article in ACS nano, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

20 authors.

Robert TsengInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Yi-Hou KuoDepartment of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Yi-Yu PanInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Zheng-Hong LiDepartment of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.ORCID 0009-0005-2211-2710
Sung-Tsun WangInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Ciao-Fen ChenDepartment of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Shun-Tsung LoDepartment of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.ORCID 0000-0002-5002-1841
Yu-Cheng ChanInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Ya-Jing WuInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Shih-Chieh ChenInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Cheng-Chen KuoTaiwan Semiconductor Manufacturing Company, Ltd., Hsinchu 30010, Taiwan.
Chun-Chen WangTaiwan Semiconductor Manufacturing Company, Ltd., Hsinchu 30010, Taiwan.
Cheng-Hsien WuTaiwan Semiconductor Manufacturing Company, Ltd., Hsinchu 30010, Taiwan.
Wen-Hsiang LuTaiwan Semiconductor Manufacturing Company, Ltd., Hsinchu 30010, Taiwan.
Xinyu BaoTaiwan Semiconductor Manufacturing Company, San Jose, California 95134, United States.
Nguyen Thi Phuong ThaoSANKEN, Osaka University, Ibaraki, Osaka 567-0047, Japan.
Emi MinamitanSANKEN, Osaka University, Ibaraki, Osaka 567-0047, Japan.
Ali JaveyElectrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States.ORCID 0000-0001-7214-7931
Chun-Liang LinDepartment of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.ORCID 0000-0001-8781-3650
Der-Hsien LienInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.ORCID 0000-0001-6774-2074

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Percolation transport dominates the charge conduction in amorphous and polycrystalline semiconductors. This study identifies a dimensional scaling effect unique to transistors using percolative semiconductors as channel materials, where the materials' percolation threshold (

Indexed as

amorphous semiconductorsdimensional scaling effectoxide semiconductorspercolation transportthreshold voltage shift

Identifiers

PMID41942348
PMCPMC13104172

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.