Evidence map›Paper›PMID 41926672›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026

The Origin of Efficiency in III-Nitride Micro-Light-Emitting Diodes.

Jeong-Hwan Park, Markus Pristovsek, Dong-Pyo Han, Jiwon Kim, Jong-In Shim, Bumjoon Kim, Soo Min Lee, Drew Hanser, Dong-Seon Lee, Yoshio Honda and 2 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Jeong-Hwan ParkInstitute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Japan.ORCID https://orcid.org/0000-0003-0117-3192
Markus PristovsekInstitute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Japan.ORCID https://orcid.org/0000-0002-7367-5397
Dong-Pyo HanDisplay & Semiconductor Engineering, School of Electrical Engineering, Pukyong National University, Busan, South Korea.ORCID https://orcid.org/0000-0002-4108-6440
Jiwon KimDepartment of Photonics and Nanoelectornics, Hanyang University, Ansan, Gyeonggi-do, South Korea.
Jong-In ShimDepartment of Photonics and Nanoelectornics, Hanyang University, Ansan, Gyeonggi-do, South Korea.ORCID https://orcid.org/0000-0002-1305-074X
Bumjoon KimVeeco Instruments Inc., Somerset, New Jersey, USA.ORCID https://orcid.org/0000-0002-2406-1241
Soo Min LeeVeeco Instruments Inc., Somerset, New Jersey, USA.ORCID https://orcid.org/0009-0007-3499-3951
Drew HanserVeeco Instruments Inc., Somerset, New Jersey, USA.
Dong-Seon LeeDepartment of Semiconductor Engineering, Gwangju Institute of Science and Technology, Gwangju, South Korea.ORCID https://orcid.org/0000-0003-2706-8702
Yoshio HondaInstitute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Japan.ORCID https://orcid.org/0009-0003-3847-9408
Tae-Yeon SeongInstitute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Japan.ORCID https://orcid.org/0000-0001-8466-3773
Hiroshi AmanoInstitute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Japan.ORCID https://orcid.org/0000-0002-7598-2593

Funding

Hanyang University RS-2025-02633001Pukyong National University 202505830001
6 · The paper itself

Abstract

We demonstrate that the primary factor determining the external quantum efficiency (EQE) of InGaN-based micro-scale light-emitting diodes (µLEDs) depends on their internal state. A comparative photoluminescence (PL) study shows that the lateral diffusion length of carriers in InGaN red µLEDs is significantly shorter than in InGaN blue µLEDs, primarily due to inhomogeneity in the bulk material. This results in an insignificant change in PL intensity regardless of sidewall conditions. Additionally, examinations of EQE and peak wavelength across various epitaxial designs and sidewall conditions reveal that sidewall-surface recombination does not significantly impact EQE in InGaN red µLEDs. Meanwhile, the peak wavelength, which represents the radiative recombination rate given by the quantum well design of InGaN red µLEDs, is found to dominantly influence the EQE of InGaN red µLEDs. Furthermore, statistical analysis based on the relative standard deviation indicates that the peak wavelength is one of the primary determinants of EQE in InGaN red µLEDs. These findings suggest that addressing internal state is crucial for optimizing EQE of µLEDs.

Indexed as

bulk materialdiffusion lengthexternal quantum efficiencymicroLEDwavelength

Identifiers

PMID41926672
PMCPMC13137796

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.