Evidence map›Paper›PMID 41919666›Full record

ArticleAdvanced materials (Deerfield Beach, Fla.)2026

Ubiquitous Antiparallel Domains in 2D Hexagonal Boron Nitride Uncovered by Interferometric Nonlinear Optical Imaging.

Yeri Lee, Juseung Oh, Kyung Yeol Ma, Seung Jin Lee, Eui Young Jung, Yani Wang, Kenji Watanabe, Takashi Taniguchi, Hailin Peng, Hiroki Ago and 3 more

Abstract read
In one paragraph

Article in Advanced materials (Deerfield Beach, Fla.), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Yeri LeeDepartment of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, Republic of Korea.
Juseung OhDepartment of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, Republic of Korea.
Kyung Yeol MaDepartment of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
Seung Jin LeeDepartment of Energy Science, Sungkyunkwan University (SKKU), Suwon, Republic of Korea.
Eui Young JungInterdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka, Japan.
Yani WangCenter for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
Kenji WatanabeResearch Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan.
Takashi TaniguchiResearch Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan.
Hailin PengCenter for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
Hiroki AgoInterdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka, Japan.
Ki Kang KimDepartment of Energy Science, Sungkyunkwan University (SKKU), Suwon, Republic of Korea.
Hyeon Suk ShinDepartment of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
Sunmin RyuDepartment of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, Republic of Korea.ORCID https://orcid.org/0000-0002-6860-6514

Funding

JSPS KAKENHI JP21H05232JSPS KAKENHI JP21H05233JSPS KAKENHI JP24H00407Ministry of Science, ICT and Future PlanningNational Research Foundation of Korea NRF-2021R1A6A1A10042944National Research Foundation of Korea NRF-RS-2024-00336324National Research Foundation of Korea NRF-RS-2024-00411134Samsung Electronics Co., Ltd IO201215-08191-01
6 · The paper itself

Abstract

Hexagonal boron nitride (hBN) supports a wide range of 2D technologies, yet assessing its crystalline quality over large areas remains a fundamental challenge. Both antiparallel domains, an intrinsic outcome of epitaxy on high-symmetry substrates, and associated structural defects have long evaded optical detection. Here, we show that interferometric second-harmonic generation (SHG) imaging provides a powerful, non-destructive probe of lattice orientation and structural integrity in 2D hBN grown by chemical vapor deposition. This approach reveals the ubiquitous formation of antiparallel domains and quantifies their impact on crystalline order. SHG intensity also emerges as a direct optical metric of domain disorder, spanning three orders of magnitude across films produced by ten different growth routes. Correlation with Raman spectroscopy establishes a unified framework for evaluating crystalline quality. Beyond hBN, this method offers a high-throughput route to wide-area structural imaging in various non-centrosymmetric materials, advancing their deployment in electronics, photonics, and quantum technologies.

Indexed as

antiparallel domainschemical vapor depositionhexagonal boron nitrideinterferometrysecond‐harmonic generation

Identifiers

PMID41919666
PMCPMC13137774

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.