Evidence map›Paper›PMID 41917005›Full record

ArticleNature communications2026

Flexible active-matrix micro-LED display with 1T-1FeMFET architecture featuring scaling-limit-free design.

Tingrui Huang, Guangan Yang, Yimeng Sang, Fulin Zhuo, Mingming Liu, Gengyu Li, Heng Cheng, Zuoxu Yu, Zhiyuan Fu, Siyang Liu and 8 more

Abstract read
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

18 authors.

Tingrui Huang *School of Integrated Circuits, National ASIC System Engineering Research Center, Southeast University, Nanjing, China.ORCID http://orcid.org/0009-0008-5828-0718
Guangan Yang *College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China.
Yimeng Sang *School of Integrated Circuits, Nanjing University, Nanjing, China.
Fulin ZhuoSchool of Electronic Science and Engineering, Nanjing University, Nanjing, China.
Mingming LiuSchool of Integrated Circuits, National ASIC System Engineering Research Center, Southeast University, Nanjing, China.
Gengyu LiSchool of Integrated Circuits, National ASIC System Engineering Research Center, Southeast University, Nanjing, China.
Heng ChengSchool of Integrated Circuits, National ASIC System Engineering Research Center, Southeast University, Nanjing, China.
Zuoxu YuSchool of Integrated Circuits, National ASIC System Engineering Research Center, Southeast University, Nanjing, China.
Zhiyuan FuSchool of Integrated Circuits, National ASIC System Engineering Research Center, Southeast University, Nanjing, China.
Siyang LiuSchool of Integrated Circuits, National ASIC System Engineering Research Center, Southeast University, Nanjing, China.
Haoliang ShenSuzhou Laboratory, Suzhou, China.
Zhihao YuCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China.ORCID http://orcid.org/0000-0002-9724-5033
Bin LiuSchool of Electronic Science and Engineering, Nanjing University, Nanjing, China.ORCID http://orcid.org/0000-0002-9495-6809
Xinran WangSchool of Electronic Science and Engineering, Nanjing University, Nanjing, China.ORCID http://orcid.org/0000-0002-3975-1667
Wangran WuSchool of Integrated Circuits, National ASIC System Engineering Research Center, Southeast University, Nanjing, China. wrwu@seu.edu.cn.ORCID http://orcid.org/0000-0001-5806-9754
Runxiao ShiSchool of Integrated Circuits, National ASIC System Engineering Research Center, Southeast University, Nanjing, China. icrshi@seu.edu.cn.ORCID http://orcid.org/0000-0001-5712-7633
Zhe ZhuangSchool of Integrated Circuits, Nanjing University, Nanjing, China. zzhuang@nju.edu.cn.ORCID http://orcid.org/0000-0002-2565-5500
Weifeng SunSchool of Integrated Circuits, National ASIC System Engineering Research Center, Southeast University, Nanjing, China. swffrog@seu.edu.cn.ORCID http://orcid.org/0000-0002-3289-8877

Funding

National Natural Science Foundation of China (National Science Foundation of China) 62274033National Natural Science Foundation of China (National Science Foundation of China) 62404110National Natural Science Foundation of China (National Science Foundation of China) 62504040National Natural Science Foundation of China (National Science Foundation of China) T2221003Natural Science Foundation of Jiangsu Province (Jiangsu Provincial Natural Science Foundation) BK20232042
6 · The paper itself

Abstract

The advancement of flexible electronics necessitates displays that combine bendability, high resolution, and energy efficiency. Nevertheless, conventional pixel architectures impose critical limitations in power consumption and scaling, hindering the development of such displays. Here, we demonstrate a flexible active-matrix micro light-emitting diode display using a ferroelectric metal field-effect transistor with hafnium-based gate stack and an indium tin oxide channel, functioning as driver and memory element, fabricated below 400 °C on polyimide. The 400°C-activated ferroelectric capacitors in transistors exhibit a remnant polarization of 47 μC/cm

Identifiers

PMID41917005
PMCPMC13199476

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.