Evidence map›Paper›PMID 41902489›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026

Quantifying Strain and Its Effect on Charge Transport in Ge/Si Core/Shell Nanowires.

Aswathi K Sivan, Nicolas Forrer, Aakash Shandilya, Yang Liu, Janica Böhler, Alexander Vogel, Arianna Nigro, Pierre Chevalier Kwon, Artemii Efimov, Ilya Golokolenov and 5 more

Abstract read
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In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

15 authors.

Aswathi K SivanDepartment of Physics, University of Basel, Basel, Switzerland.ORCID https://orcid.org/0000-0001-9545-1565
Nicolas ForrerDepartment of Physics, University of Basel, Basel, Switzerland.ORCID https://orcid.org/0009-0004-4807-425X
Aakash ShandilyaDepartment of Physics, University of Basel, Basel, Switzerland.ORCID https://orcid.org/0009-0005-8921-5925
Yang LiuDepartment of Physics, University of Basel, Basel, Switzerland.
Janica BöhlerDepartment of Physics, University of Basel, Basel, Switzerland.
Alexander VogelDepartment of Physics, University of Basel, Basel, Switzerland.ORCID https://orcid.org/0000-0002-1938-3529
Arianna NigroDepartment of Physics, University of Basel, Basel, Switzerland.ORCID https://orcid.org/0000-0002-7482-039X
Pierre Chevalier KwonDepartment of Physics, University of Basel, Basel, Switzerland.
Artemii EfimovDepartment of Physics, University of Basel, Basel, Switzerland.ORCID https://orcid.org/0000-0002-2513-6030
Ilya GolokolenovDepartment of Physics, University of Basel, Basel, Switzerland.ORCID https://orcid.org/0000-0003-3989-901X
Gerard GadeaSwiss Nanoscience Institute, University of Basel, Basel, Switzerland.ORCID https://orcid.org/0000-0003-1649-9646
Riccardo RuraliInstitut De Ciència de Materials de Barcelona, ICMAB-CSIC, Bellaterra, Spain.ORCID https://orcid.org/0000-0002-4086-4191
Andreas BaumgartnerDepartment of Physics, University of Basel, Basel, Switzerland.ORCID https://orcid.org/0000-0003-4681-4926
Dominik M ZumbühlDepartment of Physics, University of Basel, Basel, Switzerland.ORCID https://orcid.org/0000-0001-5831-633X
Ilaria ZardoDepartment of Physics, University of Basel, Basel, Switzerland.ORCID https://orcid.org/0000-0002-8685-2305

Funding

Agencia Estatal de Investigación PID2024-162811NB-I00Georg H. Endress FoundationMarie Skłodowska-Curie ActionsNachwuchsförderungs der Universität BaselQuantum Science and Technologies at the European Campus 847471Severo Ochoa Centres of Excellence Program CEX2023-001263-SSwiss National Science Foundation 225153UpQuantVal InterReg
6 · The paper itself

Abstract

Strain engineering in semiconductor nanostructures offers a promising route to optimize electronic and optical properties for advanced quantum technologies. This study explores the relationship between core and shell thicknesses and strain distribution in Ge/Si core/shell nanowires (CS NWs), targeting their application as hosts for spin qubits. NWs were synthesized using an Au-catalysed chemical vapor deposition technique, achieving control over core and shell dimensions. High-resolution transmission electron microscopy and elemental mapping confirmed structural integrity, while Geometric Phase Analysis and Raman spectroscopy provided both qualitative and quantitative insights into strain variations driven by core and shell dimensions. Furthermore, polarization-resolved µ-Raman measurements allowed us to quantify the longitudinal and transverse phonon mode splitting as a function of strain in the Ge core. The electronic transport properties were investigated by hole mobility measurements. Finally, we observed a record high hole mobility of 25400 cm

Indexed as

core–shell nanowiresgeometric phase analysisgermaniumhole mobilityRaman spectroscopysiliconstrain

Identifiers

PMID41902489
PMCPMC13252618

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.