ArticleSensors (Basel, Switzerland)2026
Transient Charge Collection in Ultra-Thin SiC Membranes for Single-Ion Detection.
Article in Sensors (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
Silicon carbide (SiC) detectors continue to emerge as a promising technology for applications requiring radiation hardness, fast response times, and stable operation in harsh environments. In this work, the charge-collection dynamics of ultra-thin membrane SiC detectors are investigated through time-dependent TCAD simulations, consistent with previously reported measurements. The study analyzes the transient response following the localized generation of electron-hole pairs induced by ions, comparing bulk and membrane detector geometries with identical active-layer thicknesses. Two-dimensional simulations provide a time-resolved characterization of the electron and hole current-density distributions within the active region of the device. The results show that both device architectures present a transient current signal featuring two main components. Despite similarities in the prompt drift-driven signal component, the SiC membrane response is characterized by a short secondary component returning to zero within 3.5 × 10
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