Source Field Plate Incorporated Monolithic Inverters Composed of GaN-Based CMOS-HEMTs with Double-2DEG Channels and Fin-Gated Multiple Nanochannels.

Hong-You Chen, Hsin-Ying Lee, Hao Lee, Yuh-Renn Wu, Ching-Ting Lee

Abstract read

In one paragraph

Article in Materials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

Hong-You ChenInstitute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan.

Hsin-Ying LeeDepartment of Photonics, National Cheng Kung University, Tainan 701, Taiwan.ORCID 0000-0001-8493-9442

Hao LeeGraduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan.

Yuh-Renn WuGraduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan.ORCID 0000-0002-1457-3681

Ching-Ting LeeInstitute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan.ORCID 0000-0001-8265-200X

Funding

National Science and Technology Council, Taiwan NSTC 113-2221-E-006-106-MY3National Science and Technology Council, Taiwan NSTC 113-2923-E-006-012National Science and Technology Council, Taiwan NSTC 114-2218-E-006-006National Science and Technology Council, Taiwan NSTC 114-2221-E-006-043National Science and Technology Council, Taiwan NSTC 114-2221-E-006-200-MY3

6 · The paper itself

Abstract

In this study, enhancement- and depletion-mode (E- and D-mode) GaN-based 120 nm-wide fin-gated multiple nanochannel metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were manufactured on the epitaxial Al

Indexed as

double-2DEG channelsfin-gated multiple nanochannelsGaN-based complementary metal–oxide–semiconductor high-electron-mobility transistorsmonolithic invertersource field plate

Identifiers

PMID41900699

DOI10.3390/ma19061209

PMCPMC13027884

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.