Investigation of Resistive Switching in Cu/a-SiC/P

Hehong Shao, Xiuwei Zhu, Xin Zhang, Wanting Zheng, Libing Zhang, Liangliang Chen

Abstract read

In one paragraph

Article in Micromachines, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

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Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

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0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Hehong ShaoSchool of Biomedical Engineering, National Engineering Research Center of Ophthalmology and Optometry, Eye Hospital, Wenzhou Medical University, Wenzhou 325027, China.

Xiuwei ZhuSchool of Biomedical Engineering, National Engineering Research Center of Ophthalmology and Optometry, Eye Hospital, Wenzhou Medical University, Wenzhou 325027, China.

Xin ZhangSchool of Biomedical Engineering, National Engineering Research Center of Ophthalmology and Optometry, Eye Hospital, Wenzhou Medical University, Wenzhou 325027, China.

Wanting ZhengSchool of Biomedical Engineering, National Engineering Research Center of Ophthalmology and Optometry, Eye Hospital, Wenzhou Medical University, Wenzhou 325027, China.

Libing ZhangSchool of Biomedical Engineering, National Engineering Research Center of Ophthalmology and Optometry, Eye Hospital, Wenzhou Medical University, Wenzhou 325027, China.

Liangliang ChenSchool of Biomedical Engineering, National Engineering Research Center of Ophthalmology and Optometry, Eye Hospital, Wenzhou Medical University, Wenzhou 325027, China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Here, the resistive switching characteristics in a Cu/a-SiC/P+-Si sandwiched structure are systematically investigated for multilevel nonvolatile memory applications. The formation of Cu conducting filaments is believed to be the switching mechanism through temperature-dependent testing. Four distinguished resistance states can be achieved in the Cu/a-SiC/P+-Si memory device through the modulation of suitable compliance current, which could be attributed to the formation of more conductive filaments when applying a higher compliance current during the Set process. In addition, these different resistance values can be easily distinguished and show reliable retention (~105 s), with the temperature even reaching 85 °C, which offers considerable potential for high-density RRAM applications.

Indexed as

compliance currentmultilevel storagemultiple conductive filamentsRRAMSiC

Identifiers

PMID41900250

DOI10.3390/mi17030364

PMCPMC13029331

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.