Evidence map›Paper›PMID 41900174›Full record

ArticleMicromachines2026

Post-Release Metallization in MEMS Silicon-to-Silicon Contact Switches for On-Resistance Improvement.

Abdurrashid Hassan Shuaibu, Almur A S Rabih, Yves Blaquière, Frederic Nabki

Abstract read
In one paragraph

Article in Micromachines, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

4 authors.

Abdurrashid Hassan ShuaibuDepartment of Electrical Engineering, École de Technologie Supérieure, Université du Québec, Montréal, QC H3C 1K3, Canada.ORCID 0009-0000-7376-0009
Almur A S RabihDepartment of Electrical Engineering, École de Technologie Supérieure, Université du Québec, Montréal, QC H3C 1K3, Canada.ORCID 0000-0002-1395-2241
Yves BlaquièreDepartment of Electrical Engineering, École de Technologie Supérieure, Université du Québec, Montréal, QC H3C 1K3, Canada.ORCID 0000-0001-6204-7427
Frederic NabkiDepartment of Electrical Engineering, École de Technologie Supérieure, Université du Québec, Montréal, QC H3C 1K3, Canada.ORCID 0000-0002-2281-7172

Funding

Natural Sciences and Engineering Research Council of Canada NIL
6 · The paper itself

Abstract

This work reports a post-release sputter-metallization process for microelectromechanical systems (MEMS) switches with silicon-to-silicon (Si-to-Si) contacts fabricated by deep reactive ion etching. Platinum (Pt) was selectively deposited on the contacting platforms through a perforated mask. Alternatively, aluminum (Al) was deposited over a thin chromium (Cr) adhesion layer. Electrical measurements showed that Pt enabled a contact resistance on the order of 406 Ω at a 1 mA test current, whereas the resistance of Al/Cr coatings decreased from 7.94 kΩ at 1 mA to 270 Ω at 25 mA, a change that was potentially linked to oxidation of the Al. These results demonstrated successful coating, with uniform top-surface and edge coverage as revealed by energy-dispersive X-ray spectroscopy imaging. Overall, the results indicate that post-release metallization has the potential to improve the operational repeatability of Si-to-Si contact MEMS switches in static and dynamic tests; the findings also point to process refinements to further optimize contact resistance.

Indexed as

aluminumcontact resistanceDRIEMEMS switchplatinumpost-release metallizationrepeatabilitysilicon-to-silicon contact

Identifiers

PMID41900174
PMCPMC13027725

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.