Evidence map›Paper›PMID 41900170›Full record

ArticleMicromachines2026

Research on Low Numerical Aperture 808 nm Fiber-Coupled Semiconductor Laser.

Fei Lin, Qi Wu, Wei Luo, Yishui Lin, Zhaoxuan Zheng, Mingkun Yuan, Qizhi Zhang, Maodong Hu, Dongxin Xu, Guojun Liu and 1 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Micromachines, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Fei LinCollege of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.ORCID 0009-0000-6451-8624
Qi WuState Key Laboratory on High-Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China.
Wei LuoCollege of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.
Yishui LinCollege of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.
Zhaoxuan ZhengCollege of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.
Mingkun YuanCollege of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.
Qizhi ZhangCollege of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.
Maodong HuCollege of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.
Dongxin XuCollege of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.
Guojun LiuCollege of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.
Yi QuCollege of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.

Funding

Hainan Province Science and Technology Special Fund GHYF2025030Hainan Province Science and Technology Special Fund ZDYF2025GXJS007The National Natural Science Foundation of China 62464006The Specific research fund for Innovation Platform for Academicians of Hainan Province under Grant YSPTZX202513
6 · The paper itself

Abstract

This article investigates fiber coupling techniques for low numerical aperture 808 nm semiconductor lasers. A coupling optical system combining fast-axis/slow-axis collimators (FAC/SAC) with a focusing lens was designed, achieving efficient coupling through high-precision optical integration packaging. First, a high-power GaAs-based 808 nm semiconductor laser chip was designed and fabricated. Its thermal performance and operational stability were enhanced by optimizing packaging materials and structures. The coupling system employs a fast-axis collimating lens, slow-axis collimating lens, and aspheric focusing lens to shape the beam and focus it into a 200 μm/0.12 NA fiber. Experimental results show that the developed coupling module achieves the threshold current of 1.2 A at 298 K, the continuous output power of 9.59 W, with the slope efficiency of 1.1 W/A, a coupling efficiency of 95%, the maximum output numerical aperture of 0.116, the wavelength temperature drift coefficient of approximately 0.2 nm/°C, and the peak brightness of 0.72 MW/cm

Indexed as

808 nm semiconductor laserfiber-coupledhigh brightnesslow numerical aperture

Identifiers

PMID41900170
PMCPMC13028037

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.