Evidence map›Paper›PMID 41872190›Full record

ArticleNature communications2026

Medium-scale integrated circuits based on p-type 2D semiconducting MoTe

Hui Wang, Zebang Luo, Biyuan Zheng, Zilan Tang, Huaidong Ye, Yulong Yuan, Yizhe Wang, Haitao Zhang, Qin Shuai, Huawei Liu and 4 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

14 authors.

Hui WangKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China.
Zebang LuoKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China.
Biyuan ZhengKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China.ORCID http://orcid.org/0000-0003-4820-7038
Zilan TangKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China.
Huaidong YeHunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, China.
Yulong YuanHunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, China.
Yizhe WangKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China.
Haitao ZhangKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China.
Qin ShuaiKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China.
Huawei LiuKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China.
Guangcheng WuKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China.
Dong LiKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China.ORCID http://orcid.org/0000-0003-0391-7060
Li XiangKey Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China. xiangli93@hnu.edu.cn.ORCID http://orcid.org/0000-0003-2620-9788
Anlian PanSchool of Physics and Electronics, Hunan Normal University, Changsha, China. anlian.pan@hnu.edu.cn.ORCID http://orcid.org/0000-0003-3335-3067

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Two-dimensional (2D) semiconductors hold promise for next-generation electronics, yet the lack of scalable p-type counterparts remains a major bottleneck, with prior studies largely limited to discrete devices or simple circuits. Here we report the realization of medium-scale integrated circuits (MSICs) based on wafer-scale p-type 2D semiconductors, enabled by the controlled synthesis of uniform 4-inch 2H-MoTe

Identifiers

PMID41872190
PMCPMC13172523

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