Evidence map›Paper›PMID 41860144›Full record

ArticleJournal of the American Chemical Society2026

Crystalline Dion-Jacobson 2D Layered Sn-Based Perovskites for Field-Effect Transistors.

Zhitian Ling, Shuanglong Wang, Arup Sarkar, Chongyao Li, Lei Gao, Ruyan Zhao, Dag W Breiby, Dwight S Seferos, Edward H Sargent, Hai I Wang and 5 more

Abstract read
In one paragraph

Article in Journal of the American Chemical Society, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

15 authors.

Zhitian LingMax Planck Institute for Polymer Research, Ackermannweg 10, Mainz 55128, Germany.
Shuanglong WangDepartment of Applied Physics, the Hong Kong Polytechnic University, Hong Kong SAR 999077, P. R. China.ORCID 0000-0002-7016-791X
Arup SarkarMax Planck Institute for Polymer Research, Ackermannweg 10, Mainz 55128, Germany.
Chongyao LiMax Planck Institute for Polymer Research, Ackermannweg 10, Mainz 55128, Germany.
Lei GaoMax Planck Institute for Polymer Research, Ackermannweg 10, Mainz 55128, Germany.
Ruyan ZhaoDepartment of Chemistry, University of Toronto, 80 St. George Street, Toronto M5S 3H6, Ontario, Canada.
Dag W BreibyDepartment of Physics, Norwegian University of Science and Technology (NTNU), Høgskoleringen 5, Trondheim 7491, Norway.
Dwight S SeferosDepartment of Chemistry, University of Toronto, 80 St. George Street, Toronto M5S 3H6, Ontario, Canada.ORCID 0000-0001-8742-8058
Edward H SargentDepartment of Electrical and Computer Engineering, University of Toronto, 35 St. George Street, Toronto M5S 3G4, Ontario, Canada.ORCID 0000-0003-0396-6495
Hai I WangMax Planck Institute for Polymer Research, Ackermannweg 10, Mainz 55128, Germany.ORCID 0000-0003-0940-3984
Mischa BonnMax Planck Institute for Polymer Research, Ackermannweg 10, Mainz 55128, Germany.ORCID 0000-0001-6851-8453
Denis AndrienkoMax Planck Institute for Polymer Research, Ackermannweg 10, Mainz 55128, Germany.ORCID 0000-0002-1541-1377
Paul W M BlomMax Planck Institute for Polymer Research, Ackermannweg 10, Mainz 55128, Germany.ORCID 0000-0002-6474-9497
Wojciech PisulaMax Planck Institute for Polymer Research, Ackermannweg 10, Mainz 55128, Germany.ORCID 0000-0002-5853-1889
Tomasz MarszalekMax Planck Institute for Polymer Research, Ackermannweg 10, Mainz 55128, Germany.ORCID 0000-0003-3322-0766

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Dion-Jacobson (DJ) phase perovskites are increasingly recognized as potential semiconductor materials for electronic applications. However, the restricted coordination between the organic diammonium cations and the inorganic framework inhibits their self-assembly into efficient DJ Sn-based perovskites during solution processing. This study introduces solvent vapor assisted drop casting (SVAD) as a novel processing method to favor the organization into highly crystalline DJ perovskite films. The key aspect of the processing is the extended crystallization time in solvent vapor at elevated temperature. The processing study was conducted on four DJ perovskites that varied in the rigidity and symmetry of their A-cations to demonstrate the universal applicability of SVAD for this category of semiconductors and to establish correlations between structure and properties. The SVAD films exhibit markedly improved crystallinity and morphology compared to spin-coated samples resulting in significantly increased local and device charge carrier mobilities. DJ perovskites with rigid and symmetric A-cations form a planar [SnI

Identifiers

PMID41860144
PMCPMC13047535

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.