Evidence map›Paper›PMID 41859560›Full record

ArticleResearch (Washington, D.C.)2026

Photoisomeric Molecule-Mediated Ion Anchoring and UV Resistance in Metal Halide Perovskites.

Wenying Zhao, Duo Qu, Yongli Zhang, Chuanzhen Shang, Xuewen Zhang, Chenyun Wang, Bin Zhou, Jingyuan Qiao, Ruilin Han, Shasha Wang and 6 more

Abstract read
In one paragraph

Article in Research (Washington, D.C.), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

16 authors.

Wenying ZhaoState Key Laboratory of Flexible Electronics (LOFE) and Institute of Flexible Electronics (IFE), Shaanxi Key Laboratory of Flexible Electronics, MIIT Key Laboratory of Flexible Electronics (KLOFE), Northwestern Polytechnical University, Xi'an 710072, China.
Duo QuState Key Laboratory of Flexible Electronics (LOFE) and Institute of Flexible Electronics (IFE), Shaanxi Key Laboratory of Flexible Electronics, MIIT Key Laboratory of Flexible Electronics (KLOFE), Northwestern Polytechnical University, Xi'an 710072, China.
Yongli ZhangHarbin Institute of Technology, No. 92 Xidazhi Street, Nangang District, Harbin City, Heilongjiang Province 150001, China.
Chuanzhen ShangState Key Laboratory of Flexible Electronics (LOFE) and Institute of Flexible Electronics (IFE), Shaanxi Key Laboratory of Flexible Electronics, MIIT Key Laboratory of Flexible Electronics (KLOFE), Northwestern Polytechnical University, Xi'an 710072, China.
Xuewen ZhangState Key Laboratory of Flexible Electronics (LOFE) and Institute of Flexible Electronics (IFE), Shaanxi Key Laboratory of Flexible Electronics, MIIT Key Laboratory of Flexible Electronics (KLOFE), Northwestern Polytechnical University, Xi'an 710072, China.
Chenyun WangState Key Laboratory of Flexible Electronics (LOFE) and Institute of Flexible Electronics (IFE), Shaanxi Key Laboratory of Flexible Electronics, MIIT Key Laboratory of Flexible Electronics (KLOFE), Northwestern Polytechnical University, Xi'an 710072, China.
Bin ZhouState Key Laboratory of Flexible Electronics (LOFE) and Institute of Flexible Electronics (IFE), Shaanxi Key Laboratory of Flexible Electronics, MIIT Key Laboratory of Flexible Electronics (KLOFE), Northwestern Polytechnical University, Xi'an 710072, China.
Jingyuan QiaoState Key Laboratory of Flexible Electronics (LOFE) and Institute of Flexible Electronics (IFE), Shaanxi Key Laboratory of Flexible Electronics, MIIT Key Laboratory of Flexible Electronics (KLOFE), Northwestern Polytechnical University, Xi'an 710072, China.
Ruilin HanState Key Laboratory of Flexible Electronics (LOFE) and Institute of Flexible Electronics (IFE), Shaanxi Key Laboratory of Flexible Electronics, MIIT Key Laboratory of Flexible Electronics (KLOFE), Northwestern Polytechnical University, Xi'an 710072, China.
Shasha WangState Key Laboratory of Flexible Electronics (LOFE) and Institute of Flexible Electronics (IFE), Shaanxi Key Laboratory of Flexible Electronics, MIIT Key Laboratory of Flexible Electronics (KLOFE), Northwestern Polytechnical University, Xi'an 710072, China.
Yuyao BiState Key Laboratory of Flexible Electronics (LOFE) and Institute of Flexible Electronics (IFE), Shaanxi Key Laboratory of Flexible Electronics, MIIT Key Laboratory of Flexible Electronics (KLOFE), Northwestern Polytechnical University, Xi'an 710072, China.
Siyu WeiState Key Laboratory of Flexible Electronics (LOFE) and Institute of Flexible Electronics (IFE), Shaanxi Key Laboratory of Flexible Electronics, MIIT Key Laboratory of Flexible Electronics (KLOFE), Northwestern Polytechnical University, Xi'an 710072, China.
Zheng BaoBeijing Solarverse Optoelectronic Technology Co., Ltd, Beijing 100176, China.
Fan XuBeijing Solarverse Optoelectronic Technology Co., Ltd, Beijing 100176, China.
Fengjun YeBeijing Solarverse Optoelectronic Technology Co., Ltd, Beijing 100176, China.
Yongguang TuState Key Laboratory of Flexible Electronics (LOFE) and Institute of Flexible Electronics (IFE), Shaanxi Key Laboratory of Flexible Electronics, MIIT Key Laboratory of Flexible Electronics (KLOFE), Northwestern Polytechnical University, Xi'an 710072, China.ORCID https://orcid.org/0000-0002-1402-4148

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Halide perovskites are novel photovoltaic materials with soft ionic lattice that are continuously exposed to sunlight during operation. High-energy ultraviolet (UV) irradiation will cause halide ion oxidation within the perovskite layer, accelerating halide ion migration and component loss, which results in a marked degradation in the device's photovoltaic performance. Here, we introduce a 2,3-bis(2,4,5-trimethyl-3-thienyl) maleimide (BTTM) molecule capable of interconversion between UV and visible light into the perovskite structure, intensifying the light stability of the perovskite layer via ion anchoring. Meanwhile, the incorporation of BTTM promotes the growth of perovskite crystals and efficiently passivates defects within the perovskite film, significantly boosting the open-circuit voltage of the perovskite solar cells. This results in a power conversion efficiency increase from 22.07% to 24.71%. Under UV irradiation (365 nm), BTTM molecules mitigate the degradation of perovskite by suppressing the ion migration of iodide ions. After cumulative exposure to 5 kWh/m

Identifiers

PMID41859560
PMCPMC12996635

What OpenQuestion holds

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Read underepoch 390

Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.