ArticleScientific reports2026
Geo-spatial prospective life cycle sustainability of InGaN and InGaP compound semiconductors.
Article in Scientific reports, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
1 citing paper in PubMed.
- Mg alloyed InP and InN as candidate materials for UV photodetectors with possible solar cell and photocatalysis applications.Scientific reports · 2026Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
5 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
This is the first study which presents integrated geo-spatial prospective life cycle and supply chain sustainability modelling of two compound semiconductors: Indium Gallium Nitride (InGaN) and Indium Gallium Phosphide (InGaP), in 80 international supply chain scenarios, incorporating 11 countries across 4-time horizons-024, 2030, 2040 and 2050. The results show environmental sustainability is geographic- and time- dependent and varied by properties of the supply chain characteristics. The manufacturing of InGaN and InGaP excel in UK based scenarios (~ 70% and 66% impact reduction from 2040 to 2050). Scenarios involving shared fabrication in the UK and US show strong sustainability performance in 2024, those for fabrication in Taiwan (for both materials) and US (InGaN) demonstrate increasing sustainability potential by 2050. Scenarios involving fabrication in China consistently led to a higher environmental impact. However, all 80 configurations demonstrate marked reductions in environmental impacts, primarily due to global electricity grid decarbonisation, and improved emissions controls. Despite this improvement in the clean room energy impact, epitaxial growth and substrate preparation remain the hotspots, calling for process innovation, cleaner precursors (e.g., replacing arsine or phosphine), and advanced material recycling. InGaN generally performs better than InGaP in most categories, attributed to its simpler material inputs and lower toxicity potential. InGaP scenarios exhibit higher marine ecotoxicity, carcinogenic toxicity, and mineral resource scarcity, driven by complex chemistries and Gallium Arsenide (GaAs) substrates. Interestingly, InGaP scenarios significantly outperform InGaN in stratospheric ozone depletion due to limited use of halogenated chemicals. This study provides compelling evidence to support reshoring or nearshoring of compound semiconductor fabrication to regions with cleaner energy profiles and stronger environmental regulations. Scenarios involving the UK, USA and Taiwan (specially in 2050), consistently achieve higher sustainability scores across global warming, toxicity, and resource depletion categories.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.