Evidence map›Paper›PMID 41836074›Full record

ArticleNational science review2026

Giant enhancement of optoelectronic properties in compressed boron-rich semiconductors.

Ming-Xing Huang, Kun Ye, Jingyu Hou, Yufei Gao, Guochun Yang, Lin Wang, Wentao Hu, Bo Xu, Zhongyuan Liu, Xiao-Ji Weng and 3 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in National science review, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Ming-Xing HuangCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Kun YeSchool of Electronics and Information Engineering, Institute of Quantum Materials and Devices, State Key Laboratory of Separation Membrane and Membrane Processes, Tiangong University, Tianjin 300387, China.
Jingyu HouCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Yufei GaoCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Guochun YangHebei Key Laboratory of Microstructural Material Physics, School of Science, Yanshan University, Qinhuangdao 066004, China.
Lin WangCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Wentao HuCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Bo XuCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Zhongyuan LiuCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Xiao-Ji WengCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Feng KeCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Xiang-Feng ZhouCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Yongjun TianCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Optoelectronic devices often experience performance degradation under extreme conditions, such as elevated dark current and reduced sensitivity. Here we demonstrate that pressure uniquely enhances the optoelectronic performance of boron-rich semiconductor AlCu

Indexed as

anti-Wilsonborideshigh pressureoptoelectronic

Identifiers

PMID41836074
PMCPMC12980326

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.