Article in Small (Weinheim an der Bergstrasse, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
2 · The registry
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
5 · Who and what money
Authors and funding
23 authors.
Jaewon WangDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.ORCID https://orcid.org/0000-0001-9224-6160
Hyeonwoo LeeDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.ORCID https://orcid.org/0009-0006-3701-6091
Jaemin KimCenter for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea.
Haeng Un YeoDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.ORCID https://orcid.org/0009-0008-8339-8152
Cheol Hwan YoonDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.ORCID https://orcid.org/0009-0004-0310-8049
Min Seok Yoo2D Device Laboratory, Samsung Advanced Institute of Technology (SAIT), Suwon, Republic of Korea.
Junseop NohDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.ORCID https://orcid.org/0009-0004-2703-9826
Sora JangDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.ORCID https://orcid.org/0009-0002-0812-9602
Ju-Hyoung HanDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
Juwon HanDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.ORCID https://orcid.org/0009-0005-0846-6301
Jaeeun ParkDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
Young Ho JinDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.ORCID https://orcid.org/0009-0009-6466-6374
Huijun HanDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.ORCID https://orcid.org/0000-0002-9614-840X
Kitae ParkDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.ORCID https://orcid.org/0000-0003-1786-0368
Joonki SuhDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.ORCID https://orcid.org/0000-0002-0221-8447
Tae-Sik YoonDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.ORCID https://orcid.org/0000-0003-1861-3537
Chanyong HwangQuantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon, Republic of Korea.ORCID https://orcid.org/0000-0002-6612-7552
Hyung-Joon ShinDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.ORCID https://orcid.org/0000-0002-6750-118X
Changwook JeongDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.ORCID https://orcid.org/0000-0003-3962-7153
Soon-Yong KwonDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.ORCID https://orcid.org/0000-0002-2432-0418
Funding
Institute of Basic Science IBS-R019-G1Korea Institute for Advancement of Technology (KIAT) P0023703Korea Institute for Advancement of Technology (KIAT) RS-2023-00231956Ministry of Science and ICT 2021R1A2C2094674Ministry of Science and ICT RS-2023-00218908Ministry of Science and ICT RS-2023-00257666Ministry of Science and ICT RS-2024-00408180Samsung Electronics IO250114-11738-02Samsung Research Funding & Incubating Center for Future Technology SRFC-IT2502-01UNIST 1.230063.01UNIST 1.260003.01
6 · The paper itself
Abstract
Non-centrosymmetric stacking in boron nitride (BN) enables out-of-plane polarization, offering a route toward 2D dielectrics with embedded nonvolatile functionality. However, achieving uniform, wafer-scale growth of metastable Bernal-stacked BN (bBN) remains challenging, as it requires breaking interlayer inversion symmetry. Here, we demonstrate the wafer-scale epitaxial growth of single-crystal bBN bilayers on Ni(111)/sapphire substrates using metal-organic chemical vapor deposition. By employing a flow-modulation epitaxy approach, we enhanced surface reaction kinetics while suppressing secondary nucleation, thereby enabling self-limiting growth of uniform bilayer bBN films. Monoatomic Ni step edges deterministically enforced the AB stacking order, energetically stabilizing the bilayer configuration by lifting the degeneracy of competing stacking orientations, as confirmed by atomic-resolution imaging and density functional theory calculations. The resulting bBN films served as atomically thin dielectric interlayers in top-gated molybdenum disulfide (MoS
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.
Wafer-Scale Self-Limiting Epitaxy of Bernal-Stacked Single-Crystal Boron Nitride. · full record | OpenQuestion