Evidence map›Paper›PMID 41833967›Full record

ArticleNature communications2026

Generic logic block based on bias-gated 2D MoS

Xiaofu Wei, Zhangyi Chen, Kuanglei Chen, Jinsen Shang, Li Gao, He Jiang, Huihui Yu, Mengyu Hong, Xiankun Zhang, Zheng Zhang and 1 more

Abstract read
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Xiaofu WeiAcademy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, PR China.
Zhangyi ChenAcademy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, PR China.
Kuanglei ChenAcademy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, PR China.
Jinsen ShangAcademy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, PR China.
Li GaoAcademy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, PR China.
He JiangAcademy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, PR China.
Huihui YuAcademy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, PR China.ORCID http://orcid.org/0009-0009-7417-9385
Mengyu HongAcademy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, PR China.
Xiankun ZhangAcademy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, PR China. zhangxiankun@ustb.edu.cn.ORCID http://orcid.org/0000-0001-9654-4659
Zheng ZhangAcademy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, PR China. zhangzheng@ustb.edu.cn.ORCID http://orcid.org/0000-0002-9104-7562
Yue ZhangAcademy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, PR China. yuezhang@ustb.edu.cn.ORCID http://orcid.org/0000-0002-8213-1420

Funding

National Natural Science Foundation of China (National Science Foundation of China) 52188101, 52225206, 62322402, 52350301, 92463308, 62304019, 52302162, 52402169, 62504018, 62404006
6 · The paper itself

Abstract

Integrating two-dimensional (2D) semiconductors and CMOS technology is a promising pathway for next-generation integrated circuits. However, the implementation of this strategy is hindered by the limited polarity modulation of 2D semiconductors and the inherent characteristics of CMOS architectures. Here, we report a generic logic block (GLB) that uses bias-gated molybdenum disulfide transistors (BG-FET). The BG-FETs exhibit threshold-adaptive field-effect characteristics through simple bias manipulation, enabling good rail-to-rail operation in the inverter circuits. The GLB composed of four BG-FETs can perform reconfigurable logic operations in a single circuit, including basic gate circuits, half-adder, multiplexer, encoder and static-random-access-memory. In contrast, conventional CMOS circuits require at least 100 transistors to perform the same set of operations. We further integrate flip-flop circuits and arithmetic logic units by cascading as-fabricated GLBs, featuring a transistor count saving of over 60% compared to CMOS design. Collectively, BG-FET-based GLB emerges as a post-CMOS integration technology with compelling potential.

Identifiers

PMID41833967
PMCPMC13136296

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.