Evidence map›Paper›PMID 41831320›Full record

ReviewAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026

Optoelectronic-Driven van der Waals Ferroelectric Materials-Based Memory Devices for Retinomorphic and In-Sensory Hardware.

Parthasarathi Pal, Yeong-Her Wang, Sanjay Kumar, Themis Prodromakis

Abstract readReview
In one paragraph

Review in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

4 authors.

Parthasarathi PalDepartment of Electrical Engineering, Indian Institute of Technology Patna, Bihar, India.ORCID https://orcid.org/0000-0002-4888-9596
Yeong-Her WangDepartment of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan.ORCID https://orcid.org/0000-0003-3796-923X
Sanjay KumarDepartment of Electrical Engineering, Indian Institute of Technology Patna, Bihar, India.ORCID https://orcid.org/0000-0001-5382-2006
Themis ProdromakisCentre For Electronics Frontiers, School of Engineering, The University of Edinburgh, Scotland, UK.ORCID https://orcid.org/0000-0002-6267-6909

Funding

Department of Science & Technology (DST), New Delhi IFA23-ENG-375Department of Science & Technology (DST) NPDF JNC/AO/A.1707/(29)/25-OW-183EPSRC FORTE Programme EP/R024642/2National Science and Technology Council NSTC-112-2221-E-006-191RAEng Chair in Emerging Technologies CiET1819/2/93
6 · The paper itself

Abstract

2D ferroelectric materials have recently emerged as a promising class of atomically thin semiconductors capable of integrating sensing, memory, and computation within a single device. Their unique combination of spontaneous switchable polarization, strong light-matter coupling, and van der Waals (vdW) interface compatibility provides an ideal platform for next-generation optoelectronic vision sensors. Coupling ferroelectric polarization with photoresponse, 2D ferroelectric materials such as α-In

Indexed as

coupling polarizationferroelectric materialsin‐memory computationin‐sensory systemoptoelectronic memoriesswitching dynamics

Identifiers

PMID41831320
PMCPMC13073310

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.