ArticleMolecules (Basel, Switzerland)2026
Single-Electron Transistor Based on Quantum Dots in Twisted Graphene/Hexagonal Boron Nitride Bilayer Heterostructure.
Article in Molecules (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
0 citing papers in PubMed.
No citing paper in PubMed yet.
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
9 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Twisted graphene/hexagonal boron nitride (TG/hBN) bilayers, with their tunable moiré potential and atomically clean interfaces, offer an ideal platform for high-performance single-electron transistors (SET). Combining quantum transport simulations with first-principles calculations, we systematically investigate how stackings (AA, AB, BA), twist angles, quantum dot sizes, and gate-island coupling jointly modulate SET performance. Our central finding reveals a clear hierarchy: quantum dot size and stacking configuration dominate charge stability and transport, while twist angle introduces precise control of charge state. All stackings exhibit sharp, symmetric Coulomb blockade peaks, confirming stable single-electron tunneling, and gate coupling remains highly linear across parameters. Strikingly, only AA-stacked devices show a systematic twist-angle-dependent shift in conductance peaks, a direct signature of its perfect atomic registry and extreme angular sensitivity. This work establishes an idealized "size-, stacking-, and twist-angle modulation" design principle and theoretical roadmap based on TG/hBN, providing fundamental insights for future experimental exploration of tunable, low-noise quantum-electronic devices from twisted 2D heterostructures.
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.