Evidence map›Paper›PMID 41826074›Full record

ArticleACS nano2026

On-Chip Direct Synthesis of 2D Semimetals for van der Waals Metal-Semiconductor Junction Transistor Arrays.

Jihoon Yang, Jaehong Im, Jaemin Kim, Hyeonwoo Lee, Jaeeun Park, Seungchan Lee, Jiyeon Lee, Byeong Kyu Kim, Myungsoo Kim, Jung-Woo Yoo and 2 more

Abstract read
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In one paragraph

Article in ACS nano, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Jihoon YangDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
Jaehong ImDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
Jaemin KimDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
Hyeonwoo LeeDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
Jaeeun ParkDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
Seungchan LeeDepartment of Electrical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
Jiyeon LeeDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
Byeong Kyu KimDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
Myungsoo KimDepartment of Electrical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.ORCID 0000-0002-5169-6381
Jung-Woo YooDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.ORCID 0000-0001-7038-4001
Zonghoon LeeDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.ORCID 0000-0003-3246-4072
Soon-Yong KwonDepartment of Materials Science and Engineering and Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.ORCID 0000-0002-2432-0418

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Metallic two-dimensional (2D) materials enable van der Waals (vdW) contacts that suppress metal- and defect-induced gap states via an intrinsic interlayer gap; however, their conventional integration through film transfer or high-temperature chemical vapor deposition often damages the underlying 2D semiconductors. Here, we report a low-temperature (350 °C), transfer-free approach to form all-2D metal-semiconductor junctions with atomically clean vdW interfaces. A predeposited chalcogen layer (Te or Se) on 2H-MoTe

Indexed as

2D semimetalschalcogen/transition-metal stackMoTe2 transistorsultralow Schottky barriervan der Waals contacts

Identifiers

PMID41826074
PMCPMC13045343

What OpenQuestion holds

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LicenceCC BY-NC-ND
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.