ArticleNanomaterials (Basel, Switzerland)2026
Low-Defect Bulk-Germanium-on-Insulator Photodetectors with Resonant Cavity Enhancement at 1550 nm for High-Resolution SWIR Imaging.
Jiale Su, Ben Li, Yuhui Ren, Junhao Du, Xiangliang Duan, Tianyu Dong, Xueyin Su, Tianchun Ye, Xuewei Zhao, Yuanhao Miao and 1 more
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In one paragraphArticle in Nanomaterials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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11 authors.
Jiale SuResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.ORCID 0009-0007-4810-2857 Ben LiResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
Yuhui RenResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.ORCID 0009-0003-9421-5423 Junhao DuResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.ORCID 0009-0004-9166-7309 Xiangliang DuanResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
Tianyu DongResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
Xueyin SuResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
Tianchun YeResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
Xuewei ZhaoResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
Yuanhao MiaoResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
Henry H RadamsonResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
Funding
the Guangdong S&T Programme 2024B0101130001the "Pearl River Talent Plan" Innovation and Entrepreneurship Team Project of Guangdong Province 2021ZT09X479
6 · The paper itselfAbstract
High-resolution short-wave infrared (SWIR) imaging requires photodetectors (PDs) with simultaneously low dark current and high responsivity. To achieve this goal, we demonstrate low-defect bulk germanium-on-insulator (bulk-GeOI) PDs designed for enhanced 1550 nm absorption and suppressed dark current via a resonant cavity and low-defect material platform. Devices were fabricated by direct bonding low-defect bulk Ge and thinning it to ~1300 nm, with an intrinsic layer thickness of only 800 nm. This design avoids epitaxial defects to lower intrinsic dark current while forming a resonant cavity for enhanced responsivity at 1550 nm. Precise doping and Al
Indexed as
bulk-GeOIexternal quantum efficiency (EQE)photodetectors (PDs)responsivityshort-wave infrared (SWIR)wafer bonding
Identifiers
PMID41823769
PMCPMC12986980
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