Evidence map›Paper›PMID 41820372›Full record

ArticleNature communications2026

Microgravity-activated high-performance van der Waals InSe ferroelectric semiconductor.

Rong Jin, Fengrui Sui, Yilun Yu, Beituo Liu, Min Jin, Xuechao Liu, Jiawen Dai, Yufan Zheng, Shujing Jia, Ruijuan Qi and 2 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Rong Jin *Key Laboratory of Polar Materials and Devices (MOE), School of Information and Electronic Engineering, East China Normal University, Shanghai, China.
Fengrui Sui *Key Laboratory of Polar Materials and Devices (MOE), School of Information and Electronic Engineering, East China Normal University, Shanghai, China.ORCID http://orcid.org/0000-0003-3893-5517
Yilun YuKey Laboratory of Polar Materials and Devices (MOE), School of Information and Electronic Engineering, East China Normal University, Shanghai, China.ORCID http://orcid.org/0009-0000-6923-1075
Beituo LiuKey Laboratory of Polar Materials and Devices (MOE), School of Information and Electronic Engineering, East China Normal University, Shanghai, China.
Min JinCollege of Materials, Shanghai Dianji University, Shanghai, China. jmaish@aliyun.com.
Xuechao LiuState Key Laboratory of Functional Crystals and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China.
Jiawen DaiKey Laboratory of Polar Materials and Devices (MOE), School of Information and Electronic Engineering, East China Normal University, Shanghai, China.
Yufan ZhengKey Laboratory of Polar Materials and Devices (MOE), School of Information and Electronic Engineering, East China Normal University, Shanghai, China.
Shujing JiaKey Laboratory of Polar Materials and Devices (MOE), School of Information and Electronic Engineering, East China Normal University, Shanghai, China.
Ruijuan QiKey Laboratory of Polar Materials and Devices (MOE), School of Information and Electronic Engineering, East China Normal University, Shanghai, China. rjqi@ee.ecnu.edu.cn.ORCID http://orcid.org/0000-0003-2305-0505
Fangyu YueKey Laboratory of Polar Materials and Devices (MOE), School of Information and Electronic Engineering, East China Normal University, Shanghai, China. fyyue@ee.ecnu.edu.cn.ORCID http://orcid.org/0000-0002-3153-6022
Junhao ChuKey Laboratory of Polar Materials and Devices (MOE), School of Information and Electronic Engineering, East China Normal University, Shanghai, China. jhchu@mail.sitp.ac.cn.

Funding

National Natural Science Foundation of China (National Science Foundation of China) 62274061Natural Science Foundation of Shanghai (Natural Science Foundation of Shanghai Municipality) 25ZR1403003
6 · The paper itself

Abstract

The space microgravity environment, scarcely attainable on Earth, is considered to have a positive effect on crystal growth, especially the van der Waals layered materials with low interlayer sliding energy barriers. Here, we investigate the structure and optical/electrical properties of van der Waals InSe semiconductor cultivated in microgravity environment on China space station. Atomic-level microstructure analyses reveal that this unique environment can successfully annihilate the naturally-existing stacking faults in flexible InSe, directly activating the intrinsic sliding ferroelectricity with excellent retention stability. The corresponding ferroelectric semiconductor field-effect transistors present obviously large non-volatile memory window, high on/off ratio and excellent mobility. More essentially, they can also give superior amplified spontaneous emission with exceptionally low excitation thresholds of photons for near infrared nonlinear light sources. These findings not only present an unconventional strategy for achieving high-quality van der Waals layered single crystals like InSe but also highlight their potential for next-generation emitter-integrated computing architectures combining memory and sensor functions.

Identifiers

PMID41820372
PMCPMC13121760

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.