Evidence map›Paper›PMID 41811949›Full record

ArticleScience advances2026

Triggering avalanche-like ultraviolet photomultiplication phenomena in ultrathin amorphous/crystalline gallium nitride heterostructures.

Dongyang Luo, Haochen Zhang, Yong Yan, Wei Chen, Danhao Wang, Huabin Yu, Xin Liu, Yang Kang, Muhammad Hunain Memon, Zhixiang Gao and 7 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Science advances, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

17 authors.

Dongyang LuoiGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China.ORCID 0009-0002-7330-2547
Haochen ZhangiGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China.ORCID 0000-0001-7664-9074
Yong YaniGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China.ORCID 0000-0003-4283-5324
Wei CheniGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China.
Danhao WangiGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China.ORCID 0000-0001-5242-177X
Huabin YuiGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China.ORCID 0000-0003-2487-2076
Xin LiuiGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China.
Yang KangiGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China.
Muhammad Hunain MemoniGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China.ORCID 0000-0002-3970-8925
Zhixiang GaoiGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China.
Yuanmin LuoiGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China.
Si LiuiGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China.
Wengang GuiGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China.
Boon S OoiPhotonics Laboratory, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia.ORCID 0000-0001-9606-5578
Lan FuResearch School of Physics, Australian National University, Canberra, ACT 2600, Australia.ORCID 0000-0002-9070-8373
Sheng LiuSchool of Integrated Circuit, Wuhan University, Wuhan 430072, P. R. China.
Haiding SuniGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei 230029, P. R. China.ORCID 0000-0001-8664-666X

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Avalanche phenomena, triggered by carrier multiplication through impact ionization under high electric fields, form the operating principle of avalanche photodiodes. However, this process inevitably leads to amplified dark current, thereby limiting the photo-to-dark-current ratio despite large gain. Here, we demonstrate avalanche-like nonlinear photocurrent amplification while we maintain ultralow dark current in an amorphous-gallium oxynitride (a-GaON)/gallium nitride (GaN) heterostructure formed via a two-step "amorphization-recrystallization" process. Instead of relying on the impact ionization process, the engineered amorphous/crystalline interface enables trap-assisted photo-induced carrier multiplication behavior at low voltages, yielding a large gain (3.9 × 10

Identifiers

PMID41811949
PMCPMC12978217

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.