ArticleNature communications2026
High-speed Si-Ge avalanche photodiode with a gain-bandwidth product of 7564 GHz.
Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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6 authors.
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Abstract
Avalanche photodetectors are renowned for their exceptional sensitivity and high gain-bandwidth product, making them highly promising for optical communications, quantum technologies, LiDAR, and biosensing. This paper presents a lateral separate absorption charge multiplication silicon-germanium avalanche photodiode designed for O-band operation. The electric field distribution was strategically designed to minimize dark current and enhance gain. A tapered input waveguide and a distributed Bragg reflector were integrated to improve responsivity. The device achieves a dark current of only 8.4 μA at 12.5 V reverse bias with an input optical power of -24 dBm and demonstrates a record-high gain-bandwidth product of 7564 GHz. High-speed eye diagram measurements confirm its support for 100 Gbps NRZ and 200 Gbps PAM4 signals, with sensitivities of -17.1 dBm and -9.6 dBm, respectively. Eye diagram validation at 200 Gbps PAM4 was also conducted across eight avalanche photodiodes aligned with an eight-channel dense wavelength division multiplexing system.
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