ArticleACS photonics2026
Sputtered AlN Buffer Layer for Low-Loss Crystalline AlN-on-Sapphire Integrated Photonics.
Article in ACS photonics, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
In recent years, aluminum nitride (AlN) has emerged as an attractive material for integrated photonics due to its low propagation losses, wide transparency window, and presence of both second- and third-order optical nonlinearities. However, most of the research led on this platform has primarily focused on applications rather than material optimization, although the latter is equally important to ensure its technological maturity. In this work, we show that voids, which are commonly found in crystalline AlN-on-sapphire epilayers, have a detrimental role in related photonic structures, as they can lead to propagation losses exceeding 30 dB cm
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