Evidence map›Paper›PMID 41779102›Full record

ArticleNano-micro letters2026

Full-Photolithographic High-Density Skin-Like Transistor Arrays for All-Organic Active-Matrix Displays.

Peng Xue, Juntong Li, Xiaoli Zhao, Yanping Ni, Hongyan Yu, Xianghui Liu, Bowen Xiang, Yao Fu, Junru Zhang, Baoying Sun and 8 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nano-micro letters, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

18 authors.

Peng Xue *Center for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, People's Republic of China.
Juntong Li *Center for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, People's Republic of China.
Xiaoli ZhaoCenter for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, People's Republic of China. zhaoxl326@nenu.edu.cn.
Yanping NiCenter for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, People's Republic of China.
Hongyan YuCenter for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, People's Republic of China.
Xianghui LiuCenter for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, People's Republic of China.
Bowen XiangCenter for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, People's Republic of China.
Yao FuCenter for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, People's Republic of China.
Junru ZhangCenter for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, People's Republic of China.
Baoying SunCenter for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, People's Republic of China.
Pengbo XiCenter for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, People's Republic of China.
Xiang SongCenter for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, People's Republic of China.
Yijun ShiCenter for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, People's Republic of China.
Guodong ZhaoCenter for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, People's Republic of China.
Mingxin ZhangCenter for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, People's Republic of China.
Yanhong TongCenter for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, People's Republic of China.
Qingxin TangCenter for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, People's Republic of China. tangqx@nenu.edu.cn.
Yichun LiuCenter for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, People's Republic of China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Organic thin-film transistors (OTFTs) are widely recognized as promising building blocks for next-generation flexible and wearable electronics. However, scalable fabrication of high-density OTFT arrays for active-matrix applications remains highly challenging, primarily due to the incompatibility of conventional photolithography with organic semiconductors. Here, we report an all-photolithographic strategy that enables the scalable fabrication of flexible OTFT arrays with both high device density and superior charge transport characteristics. By combining synergistic interfacial modulation and dual-protection photolithography strategy of organic semiconductors, we successfully fabricated transistor arrays exhibiting an average mobility above 1.0 cm

Indexed as

Active-MatrixOrganic light-emitting diodesOrganic thin-film transistorsPhotolithography

Identifiers

PMID41779102
PMCPMC12960907

What OpenQuestion holds

Textmetadata
Read underepoch 390

Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.