Evidence map›Paper›PMID 41775692›Full record

ArticleNature communications2026

Intrinsic gradient oxygen-driven second-order memristors for continual reinforcement learning.

Jianyu Ming, Ruiheng Wang, Jingwei Fu, Jing Liu, Siqi Wu, Shanshuo Liu, He Shao, Yanfei Li, Jin Wang, Yiru Wang and 4 more

Abstract read
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

14 authors.

Jianyu MingState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.
Ruiheng WangState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.
Jingwei FuState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.
Jing LiuState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.
Siqi WuState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.
Shanshuo LiuState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.
He ShaoState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.
Yanfei LiState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.
Jin WangState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.
Yiru WangState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.
Xumeng ZhangState Key Laboratory of Integrated Chip and System, Frontier Institute of Chip and System, Fudan University, Shanghai, China.ORCID http://orcid.org/0000-0002-3828-151X
Linghai XieState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China. iamlhxie@njupt.edu.cn.ORCID http://orcid.org/0000-0001-6294-5833
Haifeng LingState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China. iamhfling@njupt.edu.cn.ORCID http://orcid.org/0000-0001-8555-0391
Wei HuangState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China. vc@nwpu.edu.cn.ORCID http://orcid.org/0000-0001-7004-6408

Funding

National Natural Science Foundation of China (National Science Foundation of China) 62288102
6 · The paper itself

Abstract

The intrinsic gradient in organisms governs long-term information processing and continual learning in dynamic environments. Reinforcement learning (RL) aims to emulate such temporal regulation to enhance learning efficiency and adaptability. However, the absence of intrinsic gradient construction in existing memristive devices leads to stochastic and abrupt state changes, disrupting the generation of temporally correlated internal states critical for continual RL. In this work, a second-order memristor incorporating a stable intrinsic oxygen gradient was designed via a molecular-coordinated layer, which enables a prolonged dynamic barrier evolution (>10

Identifiers

PMID41775692
PMCPMC13065882

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.