ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026
Modulating Persistent Photoconductivity through Barrier Engineering for High-performance and Multifunctional Two-dimensional Optoelectronic Devices.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
2D optoelectronic devices, such as photomemory and photodetectors, have exceptional potential for realising multifunctional applications. Modulating persistent photoconductivity (PPC) is key to enabling diverse functionalities and optimising device performance. However, PPC in 2D devices is difficult to modulate due to surface defects (trap states), Fermi level pinning, and the Schottky barrier height at junctions. In this study, we demonstrate that reducing surface defects and Fermi level pinning enables barrier engineering for effective PPC modulation. The persistent photoconductivity gain (PPCG) is tunable from 307.6% to 4.72%, enabled by tailoring the Schottky barrier height through a van der Waals contact strategy. A high PPCG (307.6%) is achieved in a high-barrier Au/MoS
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