ReviewLight, science & applications2026
Advancing flexible optoelectronics with III-nitride semiconductors: from materials to applications.
Review in Light, science & applications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
2 citing papers in PubMed.
- Air-Cladding Blue Laser Diodes.ACS applied materials & interfaces · 2026Article
- Dual-Functional Metal Interlayer Enables High-Quality GaN Epitaxy and Low-Damage Transfer Towards Flexible Optoelectronics.Small methods · 2026Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
5 authors.
Funding
Abstract
The rapid evolution of wearable technology, interconnected devices, and medical devices is driving innovation in advanced materials for flexible optoelectronics. III-nitride semiconductors, with their exceptional optoelectronic properties, strong piezotronic and piezo-phototronic effects, biocompatibility, and thermal/chemical/mechanical stability, present a compelling alternative to traditional organic and Si-based inorganic materials. Despite significant research efforts, a systematic review summarizing the advancements and challenges in III-nitride flexible optoelectronics is lacking. This article provides a comprehensive overview of recent developments in this field. It begins by highlighting the advantages of III-nitride semiconductors for flexible optoelectronics. The article then discusses the fabrication techniques for III-nitride flexible devices, covering materials growth, film exfoliation and transfer, as well as functional micro/nanostructures. A wide range of flexible applications of III-nitrides are explored, including flexible displays, implantable optogenetic devices, wearable photodetectors, and flexible mechanical sensors. Finally, challenges and potential solutions related to device fabrication, performance enhancement, theoretical modeling, and system integration are discussed. This work serves as a foundational reference and roadmap for further advancements in III-nitride flexible optoelectronics.
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.