Evidence map›Paper›PMID 41767965›Full record

ArticleNanoscale advances2026

Raised or recessed? Finding the optimal gate architecture for improving the static performance of graphene transistors.

Tzu-Jung Huang, Andrew Spencer, Luke Ingraham, Anibal Pacheco-Sanchez, Ivan Puchades

Abstract read
In one paragraph

Article in Nanoscale advances, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

Tzu-Jung HuangDepartment of Microsystems Engineering, Rochester Institute of Technology USA ivan.puchades@rit.edu.ORCID https://orcid.org/0009-0003-8886-9412
Andrew SpencerDepartment of Electrical and Microelectronics Engineering, Rochester Institute of Technology USA.ORCID https://orcid.org/0009-0008-3716-4304
Luke IngrahamDepartment of Microsystems Engineering, Rochester Institute of Technology USA ivan.puchades@rit.edu.ORCID https://orcid.org/0009-0000-1187-0245
Anibal Pacheco-SanchezDepartamento de Electrónica y Tecnología de Computadores, Universidad de Granada Spain.ORCID https://orcid.org/0000-0002-0897-0605
Ivan PuchadesDepartment of Microsystems Engineering, Rochester Institute of Technology USA ivan.puchades@rit.edu.ORCID https://orcid.org/0000-0002-2242-5937

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

As silicon CMOS technology approaches its scaling limits, graphene offers a compelling alternative as the active material channel in transistors due to its high carrier mobility and atomically thin profile, which provide strong electrostatic control and promise high-performance analog applications. However, roadblocks such as device-to-device variation, high contact resistance, poor dielectric interfaces, and non-uniform graphene quality have limited the adoption of graphene field effect transistors (GFETs). Hence, further investigations are required for mitigating these issues at a material,

Identifiers

PMID41767965
PMCPMC12947777

What OpenQuestion holds

Textmetadata
LicenceCC BY-NC
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.