Evidence map›Paper›PMID 41766714›Full record

ArticleACS applied electronic materials2026

ALD-Derived WO

Nashrah Afroze, Jihoon Choi, Salma Soliman, Chang Hoon Kim, Jiayi Chen, Yu-Hsin Kuo, Mengkun Tian, Chengyang Zhang, Priyankka Gundlapudi Ravikumar, Suman Datta and 3 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in ACS applied electronic materials, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Nashrah AfrozeDepartment of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.ORCID https://orcid.org/0009-0005-7048-413X
Jihoon ChoiSchool of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea.
Salma SolimanDepartment of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
Chang Hoon KimSchool of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea.
Jiayi ChenDepartment of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
Yu-Hsin KuoDepartment of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
Mengkun TianInstitute of Materials and Systems, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.ORCID https://orcid.org/0000-0003-2790-7799
Chengyang ZhangDepartment of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.ORCID https://orcid.org/0009-0000-6303-1080
Priyankka Gundlapudi RavikumarDepartment of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
Suman DattaDepartment of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
Andrea PadovaniDepartment of Engineering Sciences and Methods (DISMI), University of Modena and Reggio Emilia, Reggio Emilia 42122, Italy.ORCID https://orcid.org/0000-0003-1145-5257
Jun Hee LeeSchool of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea.ORCID https://orcid.org/0000-0001-5121-244X
Asif KhanDepartment of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Breaking the memory wall in advanced computing architectures will require complex 3D integration of emerging memory materials such as ferroelectricseither within the back-end-of-line (BEOL) of CMOS front-end processes or through advanced 3D packaging technologies. Achieving this integration demands that memory materials exhibit high thermal resilience, with the capability to operate reliably at elevated temperatures, such as 125°C, due to the substantial heat generated by front-end transistors. However, silicon-compatible HfO

Indexed as

3D integrationALD deposited WO3−xferroelectric memoryHfO2-based ferroelectricshigh-temperature operationmemory-on-logicnearly wake-up-freeoxygen reservoir layer

Identifiers

PMID41766714
PMCPMC12937100

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.