Evidence map›Paper›PMID 41753909›Full record

ArticleMicromachines2026

Electro-Thermal Co-Design and Verification of TGV Transmission Structures for High-Power High-Frequency Applications.

Luming Chen, Zhilin Wei, Shenglin Ma, Yan Chen, Yihan Xie, Chunlei Li, Shuwei He, Hai Yuan

Abstract read
In one paragraph

Article in Micromachines, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. On-chip integrated NDIR COMicrosystems & nanoengineering · 2026
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Luming ChenPen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China.
Zhilin WeiPen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China.
Shenglin MaPen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China.ORCID 0000-0002-3481-3929
Yan ChenSchool of Electronic Science and Engineering, Xiamen University, Xiamen 361005, China.
Yihan XiePen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China.
Chunlei LiPen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China.
Shuwei HeChengdu Ganide Technology Co., Ltd., Chengdu 610000, China.
Hai YuanXi'an Microelectronic Technology, Xi'an 710071, China.

Funding

National Natural Science Foundation of China (NSFC) Major Research Plan Cultivation Project "Research on Integrated Manufacturing, Thermal Design, and Failure Modes of Silicon Microchannels in 10-kW-Level 2.5D/3D Integrated Wafer-Level Chip Packaging 92373107Natural Science Foundation of Fujian Province " Study on Thermal Dissipation Limits and Failure Mechanisms of Microchannel Cooling in TSV 2.5D Integrated High-Power GaN HEMT Devices" 2024J02004
6 · The paper itself

Abstract

Through Glass Via (TGV) technology has emerged as a promising solution for advanced packaging. While glass offers lower dielectric loss than silicon, its lower thermal conductivity raises concerns about electro-thermal coupling effects in high-power, high-frequency applications. Therefore, this study conducted an electro-thermal co-design of TGV grounded Coplanar Waveguide (CPW) and Radio Frequency (RF) TGV connected CPW structures. A high-power test platform was developed to investigate the electrical and thermal performance of these structures. The temperature distribution mechanism under high-power conditions was revealed. Under high power and high frequency, the decrease in surface conductivity affected by surface state and film layer composition leads to increased loss, triggering temperature rise and forming an electrothermal coupling loop. Under continuous wave operation (5-20 W), the temperature rise reaches 92.4 °C while insertion loss increases by only 0.4 dB. Under pulsed wave operation (25-100 W, 2.5% duty cycle), the temperature rise is merely 2.1 °C with insertion loss increasing by 0.3 dB. The quadruple-redundant design and reduces heat flux density, preventing localized hotspot formation. The pulse intervals suppress thermal accumulation, leading to lower temperature rise. Therefore, continuous wave applications should prioritize thermal management, while pulsed wave applications can focus on electrical performance optimization.

Indexed as

continuous/pulsed waveelectro-thermal couplinghigh-powerthermal resistanceThrough Glass Via

Identifiers

PMID41753909
PMCPMC12942756

What OpenQuestion holds

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LicenceCC BY
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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.