Parasitics-Aware Quantum Transport Simulation of Stacked Si Nanosheet LGAA-nFETs for Sub-2 nm Node RF Applications.

Qi Shen, Shuo Zhang, Zhi-Fa Zhang, Wenchao Chen, Zekai Zhou, Sichao Du, Hao Xie, Wen-Yan Yin

Abstract read

In one paragraph

Article in Micromachines, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

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3 · Its place in the literature

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0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

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PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Qi ShenCollege of Integrated Circuits, Zhejiang University, Hangzhou 311200, China.ORCID 0009-0007-5744-3776

Shuo ZhangCollege of Integrated Circuits, Zhejiang University, Hangzhou 311200, China.ORCID 0000-0002-2284-7427

Zhi-Fa ZhangCollege of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China.

Wenchao ChenSchool of Integrated Circuits, Shanghai Jiao Tong University, Shanghai 200240, China.ORCID 0000-0001-7613-1734

Zekai ZhouCollege of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China.

Sichao DuCollege of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China.ORCID 0000-0003-3060-5759

Hao XieCollege of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China.ORCID 0000-0002-1183-8090

Wen-Yan YinCollege of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China.

Funding

National Natural Science Foundation of China 62301478, 62025403, U23A20351Zhejiang Provincial Natural Science Foundation LD24F040002, LQ22F010002Zhejiang Provincial Postdoctoral Science Foundation ZJ2023088

6 · The paper itself

Abstract

This work presents a comprehensive quantum transport modeling and simulation framework to evaluate parasitic effects and radio frequency (RF) performance in stacked silicon (Si) nanosheet (NS) lateral gate-all-around (LGAA) nFETs targeting the sub-2 nm technology node. Leveraging the non-equilibrium Green's function (NEGF) method, the proposed framework integrates detailed modeling of parasitic resistances (

Indexed as

crystal orientationdual-k spacernon-equilibrium Green’s function (NEGF)operational frequencyparasitic effectstacked nanosheet transistorsterahertz applicationtwo-band k·p

Identifiers

PMID41753896

DOI10.3390/mi17020240

PMCPMC12942810

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.