ReviewNanomaterials (Basel, Switzerland)2026
Recent Advances in Diamond-Capped GaN HEMTs for RF Application.
Review in Nanomaterials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
Self-heating effects severely limit the performance of gallium nitride high-electron-mobility transistors (GaN HEMTs) in high-power radio frequency (RF) applications. Diamond capping technology leveraging diamond's exceptional thermal conductivity (>2000 W/m·K) has emerged as a highly promising near-junction cooling solution. However, its integration with GaN HEMTs faces challenges including lattice/thermal mismatch, high thermal boundary resistance (TBR), and process compatibility. This review summarizes recent progress in high-thermal-conductivity diamond film growth, TBR optimization, thermal simulations, and the integrated process with GaN devices. These technological breakthroughs enable diamond-capped GaN HEMTs with an excellent comprehensive performance. Continued advances in these fields will be critical for fully releasing the capabilities of diamond capping technology for GaN HEMTs in high-frequency and high-power applications.
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