ArticleSmall methods2026
Spontaneous Intercalation of Graphene on Sapphire.
Article in Small methods, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
The direct synthesis of graphene on dielectric substrates has attracted growing interest due to its potential for scalable, transfer-free integration in electronic and photonic applications. However, graphene grown on dielectrics typically exhibits lower carrier mobility compared to copper-grown counterparts, limiting its performance. Here, we report the synthesis of large-area graphene on Al-rich reconstructed c-plane sapphire (0001) via chemical vapor deposition (CVD) and reveal that, over time and under ambient storage conditions, a spontaneous decoupling occurs at the graphene-sapphire interface. Raman spectroscopy reveals a reduction in both strain and doping in the aged samples, consistent with electrical transport measurements showing a twofold increase in carrier mobility. X-ray photoelectron spectroscopy (XPS) and cross-sectional transmission electron microscopy (cross-sectional TEM) identify the intercalation of oxygen-containing species at the interface as the mechanism responsible for the decoupling. These findings uncover a previously unrecognized pathway to enhance the electronic performance of directly grown graphene on sapphire, reinforcing the viability of this platform for future scalable graphene-based technologies.
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