Evidence map›Paper›PMID 41733172›Full record

ArticleACS nano2026

Bismuth Confinement: A Strategy for Low Resistance and Good Thermal Endurance of Integrated Contacts to MoS

Wen-Chia Wu, Terry Y T Hung, Fu-Kuo Hsueh, Bo-Heng Liu, Wei-Sheng Yun, Yun-Yan Chung, Yu-Ching Wang, Ze-Rui Lin, Meng-Zhan Li, Zih-Siang Jian and 12 more

Abstract read
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In one paragraph

Article in ACS nano, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

22 authors.

Wen-Chia WuInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.ORCID 0009-0007-8252-8835
Terry Y T HungCorporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan.
Fu-Kuo HsuehTaiwan Semiconductor Research Institute, Hsinchu 300091, Taiwan.
Bo-Heng LiuNational Center for Instrumentation Research, National Institutes of Applied Research, Hsinchu 30076, Taiwan.
Wei-Sheng YunCorporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan.ORCID 0009-0009-9309-9188
Yun-Yan ChungCorporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan.
Yu-Ching WangInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.ORCID 0009-0004-9995-6447
Ze-Rui LinInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Meng-Zhan LiCorporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan.
Zih-Siang JianDepartment of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Szu-Huan HsuParallel and Scientific Computing Laboratory, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Jian-Chen TsaiDepartment of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Jyun-Hong ChenTaiwan Semiconductor Research Institute, Hsinchu 300091, Taiwan.
Chien-Wei ChenNational Center for Instrumentation Research, National Institutes of Applied Research, Hsinchu 30076, Taiwan.
Yiming LiParallel and Scientific Computing Laboratory, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Wen-Hao ChangDepartment of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.ORCID 0000-0003-4880-6006
Wei-Yen WoonCorporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan.
Chi-Chung KeiNational Center for Instrumentation Research, National Institutes of Applied Research, Hsinchu 30076, Taiwan.
Tuo-Hung HouTaiwan Semiconductor Research Institute, Hsinchu 300091, Taiwan.
Chao-Ching ChengCorporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan.
Iuliana P RaduCorporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan.
Chao-Hsin ChienInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are preponderant candidates for advanced nanoelectronics owing to their atomically thin body, which could enable excellent electrostatic control. High current density NMOS transistors have been demonstrated with semimetal Bi and Sb contacts. Both these semimetals have low melting temperatures and thus limit their integration flow compatibility with the modern integrated circuit technologies. Integration of those metal layers requires exposing the transistors to 400 °C H

Indexed as

back-end-of-line (BEOL) integrationcontact resistancemonolithic 3D integrationsemimetal contactsthermal stabilitytwo-dimensional semiconductors

Identifiers

PMID41733172
PMCPMC13045353

What OpenQuestion holds

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LicenceCC BY
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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.