Evidence map›Paper›PMID 41731072›Full record

ReviewCommunications engineering2026

Oxide semiconductor gain cell-embedded memory: materials and integration strategies for next generation on-chip memory.

Sang Won Chung, Seong Hun Yoon, Jae Kyeong Jeong

Abstract readReview
In one paragraph

Review in Communications engineering, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

3 authors.

Sang Won Chung *Department of Electronic Engineering, Hanyang University, Seoul, Republic of Korea.ORCID http://orcid.org/0009-0008-5847-3560
Seong Hun Yoon *Department of Display Science and Engineering, Hanyang University, Seoul, Republic of Korea.ORCID http://orcid.org/0009-0000-7269-840X
Jae Kyeong JeongDepartment of Electronic Engineering, Hanyang University, Seoul, Republic of Korea. jkjeong1@hanyang.ac.kr.ORCID http://orcid.org/0000-0003-3857-1039

Funding

Ministry of Trade, Industry and Energy (Ministry of Trade, Industry and Energy, Korea) RS-2023-00235609National Research Foundation of Korea (NRF) 2022M3H4A1A04068923National Research Foundation of Korea (NRF) No. RS-2023-00260527
6 · The paper itself

Abstract

The data processing demands of the digital era have exposed limitations in conventional memory architectures. Gain cell-embedded dynamic random-access memory based on oxide semiconductors is emerging as a solution, addressing scalability, power efficiency, and integration density challenges. Our review highlights that oxide semiconductors offer exceptional properties for gain cell memory applications, including ultra-low leakage currents and wide bandgap characteristics, while their advanced structures like gate-all-around and channel-all-around stacked architectures demonstrate the potential for high-density integration. While challenges in manufacturing and reliability persist, this paradigm shift in memory design holds promise for reshaping computing systems for artificial intelligence and advanced computing applications.

Identifiers

PMID41731072
PMCPMC12929724

What OpenQuestion holds

Textmetadata
LicenceCC BY-NC-ND
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.