Evidence map›Paper›PMID 41725251›Full record

ArticleACS applied materials & interfaces2026

Origin of Threshold Voltage Instabilities in Indium Oxide Transistors.

Tzu-Jie Lin, Sheng-Chung Chen, Yung-Ting Lee, Sheng-Lun Cheng, Robert Tseng, Sung-Tsun Wang, Yu-Cheng Chang, Yi-Yu Pan, Chan-Yuen Chang, Tsung-Te Chou and 6 more

Abstract read
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In one paragraph

Article in ACS applied materials & interfaces, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

16 authors.

Tzu-Jie LinInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Sheng-Chung ChenInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Yung-Ting LeeDepartment of Applied Science, National Taitung University, Taitung 950309, Taiwan.
Sheng-Lun ChengInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Robert TsengInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Sung-Tsun WangInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Yu-Cheng ChangInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Yi-Yu PanInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Chan-Yuen ChangTaiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu 300092, Taiwan.
Tsung-Te ChouTaiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu 300092, Taiwan.
Chia-Hsien LinScientific Gear Service Co., Hsinchu 308003, Taiwan.
Ching-Shun KuScientific Gear Service Co., Hsinchu 308003, Taiwan.
Chun-Liang LinDepartment of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.ORCID 0000-0001-8781-3650
Po-Tsun LiuDepartment of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.ORCID 0000-0001-8560-3668
Hyungjin KimDepartment of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea.ORCID 0009-0008-1528-6474
Der-Hsien LienInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.ORCID 0000-0001-6774-2074

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Oxide semiconductors have gained substantial interest for their low-temperature processability, allowing for their integration as functional add-on device layers for advanced monolithic 3D integrated circuits (ICs). However, reliability issues, particularly under thermal, environmental, and electrical stresses, remain critical issues and require immediate solutions. This study investigates the instability of ultrathin In

Indexed as

charge exchange kineticsIn2O3oxide semiconductorssurface oxygenthreshold voltage instabilityultrathin films

Identifiers

PMID41725251
PMCPMC13006957

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.