ArticleSmall (Weinheim an der Bergstrasse, Germany)2026
Direct Write, Read, and Erase of a Vertical Heterostructure of Graphene-Monolayer Electrolyte-h-BN Using Electric Force Microscopy.
Article in Small (Weinheim an der Bergstrasse, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
Electric double layer (EDL) gating effectively modulates charge density in two dimensional (2D) crystals; however, the electrolyte is typically deposited on top of the 2D crystal, controlling charge most strongly in the 2D material it contacts directly. Here, a monolayer-thick electrolyte is positioned between two, 2D materials - hexagonal BN (h-BN) and multi-layer graphene - in a vertical heterostack. Ions in the electrolyte are bistable, meaning they can be moved by field-effect closer to either of the 2D crystals and retain doping after the voltage is removed. Electric force microscopy (EFM) is used to write, read, and erase the heterostacks, and map the graphene surface charge with 12 × 12 nm resolution. With graphene as the top layer of the heterostack, ions in the monolayer electrolyte dope the 2D crystal from underneath, inducing sheet densities of 5 × 10
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