Evidence map›Paper›PMID 41716965›Full record

ArticleSmall science2026

Strained 2D Semiconductor Lateral Heterojunctions via Grayscale Thermal-Scanning Probe Lithography.

Giorgio Zambito, Giulio Ferrando, Matteo Barelli, Michele Ceccardi, Federico Caglieris, Daniele Marrè, Francesco Bisio, Francesco Buatier de Mongeot, Maria Caterina Giordano

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Small science, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Giorgio ZambitoDipartimento di Fisica Università di Genova Via Dodecaneso 33 16146 Genova Italy.
Giulio FerrandoDipartimento di Fisica Università di Genova Via Dodecaneso 33 16146 Genova Italy.
Matteo BarelliDipartimento di Fisica Università di Genova Via Dodecaneso 33 16146 Genova Italy.
Michele CeccardiDipartimento di Fisica Università di Genova Via Dodecaneso 33 16146 Genova Italy.
Federico CaglierisCNR-SPIN Corso Perrone 24 16152 Genova Italy.
Daniele MarrèDipartimento di Fisica Università di Genova Via Dodecaneso 33 16146 Genova Italy.
Francesco BisioCNR-SPIN Corso Perrone 24 16152 Genova Italy.
Francesco Buatier de MongeotDipartimento di Fisica Università di Genova Via Dodecaneso 33 16146 Genova Italy.ORCID 0000-0002-8144-701X
Maria Caterina GiordanoDipartimento di Fisica Università di Genova Via Dodecaneso 33 16146 Genova Italy.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Nanoscale tailoring of the optoelectronic response of 2D transition metal dichalcogenides semiconductor layers (TMD) is demonstrated thanks to a novel strain engineering approach based on grayscale thermal-Scanning Probe Lithography (t-SPL). This method allows the maskless nanofabrication of locally strained 2D MoS

Indexed as

2D transition metal dichalcogenides semiconductors3D grayscale nanolithographyfew‐layer MoS2Kelvin Probe Force Microscopylateral heterojunctionslocal strain engineeringthermal‐Scanning Probe Lithography

Identifiers

PMID41716965
PMCPMC12915091

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.