ArticleACS nano2026
Impact of Contact Gating on Scaling of Monolayer 2D Transistors Using a Symmetric Dual-Gate Structure.
Article in ACS nano, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
1 citing paper in PubMed.
- Integration of high-κ oxide on 2D semiconductors with carbon-dot monolayer assembly as van der Waals interfacial layer.Nature communications · 2026Article
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Authors and funding
7 authors.
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No grant is acknowledged in the PubMed record.
Abstract
The performance and scalability of two-dimensional (2D) field-effect transistors (FETs) are strongly influenced by geometry-defined electrostatics. In most 2D FET studies, the gate overlaps with the source/drain electrodes, allowing the gate potential to modulate the 2D semiconductor underneath the electrodes and ultimately affect carrier transport at the metal-semiconductor interface─a phenomenon known as contact gating. Here, a symmetric dual-gate structure with independently addressable back and top gates is employed to elucidate the impact of contact gating on a monolayer MoS
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