ArticleACS applied electronic materials2026
Sustainable Manufacturing of Fully Printed Zn/ZnO/CNT Schottky Diodes on Kraft Paper.
Article in ACS applied electronic materials, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
0 citing papers in PubMed.
No citing paper in PubMed yet.
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
7 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
The escalating generation of electronic waste underscores the critical need for sustainable alternatives to conventional electronic technologies. Printed electronics emerge as a promising approach to address this issue by incorporating sustainable materials, implementing energy-efficient fabrication methods compatible with large-area manufacturing, and integrating end-of-life (EoL) strategies to minimize the environmental impact associated with waste management. In this work, we demonstrate fully printed Schottky diodes on kraft paper substrates fabricated using zinc (Zn) as a sustainable ohmic contact, zinc oxide (ZnO) nanoparticles as the semiconductor layer, and carbon nanotubes (CNTs) as the Schottky contact. The devices were manufactured using large area deposition processes at low-temperature and with vacuum-free printing techniques. The Cheung, Norde, and Mikhelashvili methods enabled the estimation of an effective Schottky barrier height of 0.75 ± 0.04 eV, a series resistance of 2.2 ± 1.5 kΩ, and a high ideality factor of 8.0 ± 1.4, which was corrected to 5.1 when it was voltage independent. These analyses also revealed the presence of trap states and the onset of a space-charge-limited current (SCLC) regime, with these electrical properties interpreted being considered and correlated with the morphological and structural characterizations. The diode exhibited a rectification ratio of (1.6 ± 1.2) × 10
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.