ArticleScience advances2026
Nanogate ferroelectric transistors with ultralow operation voltage of 0.6 V.
Article in Science advances, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
1 citing paper in PubMed.
- All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths.Nature communications · 2026Article
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Authors and funding
6 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Ferroelectric field-effect transistors (FeFETs), as an electric field-driven nonvolatile memory, offer extremely low power consumption and high speed. Despite efforts, FeFETs have not been successfully scaled down to sub-5-nanometer-node technology, with their operational voltage exceeding 1.5 V, making them unable to match monolithic logic cores. Our study used metallic single-walled carbon nanotubes as gate electrodes to shrink the gate length of molybdenum disulfide FeFET to 1 nanometer. This nanogate approach leads to an electric field concentration and enhanced ferroelectric-to-metal-oxide semiconductor capacitance coupling, resulting in a reduced operating voltage of 0.6 V, below the conventional ferroelectric coercive voltage. The nanogate molybdenum disulfide FeFETs exhibit superior memory performance, with a substantial current on/off ratio of 2 × 10
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Registered trials
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