Lithography-free, site-controlled germanium quantum dots in silicon nanowires for single-hole transistors operating up to 50 K.

Junyang An, Zhiyan Hu, Zhengyi He, Songlin Li, Xiaopan Song, Lijuan Zhao, Junzhuan Wang, Linwei Yu

Abstract read

In one paragraph

Article in Science advances, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

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0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

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5 · Who and what money

Authors and funding

8 authors.

Junyang AnSchool of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.ORCID 0009-0008-2522-5165

Zhiyan HuSchool of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.

Zhengyi HeSchool of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.

Songlin LiSchool of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.ORCID 0000-0002-3995-9580

Xiaopan SongSchool of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.ORCID 0009-0003-3990-6053

Lijuan ZhaoMaterials Genome Institute, Shanghai University, Shanghai 200444, P. R. China.ORCID 0000-0001-9140-9554

Junzhuan WangSchool of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.ORCID 0000-0003-1851-220X

Linwei YuSchool of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.ORCID 0000-0002-0801-5210

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Precise control over quantum dot (QD) position and size is critical for quantum electronics but typically requires complex nanofabrication. Here, we report a step-confined heteroprecursor supply (sc-HPS) strategy for growth of crystalline germanium (c-Ge) QDs at predefined step edges within planar ultrathin silicon nanowire (SiNW) channels, eliminating the need for high-resolution lithography. Unlike conventional in-plane solid-liquid-solid growth using a uniform amorphous silicon precursor, sc-HPS uses a spatially confined amorphous germanium (a-Ge) layer defined by oblique patterning of a SiO

Identifiers

PMID41686901

DOI10.1126/sciadv.aed0335

PMCPMC12904181

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.