Highly Sensitive Room-Temperature Graphene-Modulated AlGaN/GaN HEMT THz Detector Architecture.

Abstract read

In one paragraph

Article in Sensors (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

2 authors.

Rudrarup SenguptaDepartment of Photonics and Electro-Optics Engineering, School of Electrical and Computer Engineering, Ben-Gurion University of the Negev, Beer Sheva 8410501, Israel.ORCID 0000-0002-0670-918X

Gabby SarusiDepartment of Photonics and Electro-Optics Engineering, School of Electrical and Computer Engineering, Ben-Gurion University of the Negev, Beer Sheva 8410501, Israel.ORCID 0000-0001-6717-2235

Funding

Ben-Gurion University of the Negev N/A

6 · The paper itself

Abstract

This work proposes new architecture, supported by analytical modelling and computer-aided design (CAD) simulations, for a highly sensitive monolayer graphene-gated AlGaN/GaN HEMT terahertz (THz) detector operating at room temperature (RT). The monolayer graphene gate acts as a surface plasmon absorber for the incident THz radiation. The carrier density perturbation caused by incident THz energy on the monolayer graphene surface is then capacitively coupled to the two-dimensional electron gas (2DEG) channel of the HEMT structure underneath. The channel is partially depleted for increased mobility and nonlinearity with potential asymmetry across the channel for consistent photogeneration. The Drude absorption of THz radiation initiates intraband transitions in monolayer graphene, thereby reducing phonon losses. These reduced phonon losses enable RT THz detection. Based on our simulations, the proposed detector architecture can generate a responsivity of 2.12 × 10

Indexed as

AlGaN/GaN HEMTmonolayer grapheneroom-temperature THz detectionTHz detector

Identifiers

PMID41682523

DOI10.3390/s26031006

PMCPMC12900085

What OpenQuestion holds

Textmetadata

LicenceCC BY

Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.