ArticlePolymers2026
An Investigation of the Electrical Performance of Polymer-Based Stretchable TFTs Under Mechanical Strain Using the Y-Function Method.
Article in Polymers, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
Stretchable semiconductors capable of maintaining electrical performance under large mechanical deformation are essential for reliable wearable electronic devices. However, polymer semiconductors often suffer from electrical degradation when subjected to tensile strain. In this study, electrical stability under strain was achieved by using a rubber-blended poly(2,5-bis(2-octyldodecyl)-3,6-di(thiophen-2-yl)diketopyrrolo[3,4-c]pyrrole-1,4-dione-alt-thieno[3,2-b]thiophene) (DPPT-TT) polymer semiconductor based on a conjugated polymer/elastomer phase separation-induced elasticity (CONPHINE) structure. Unlike most previous studies on fully stretchable thin-film transistors (TFTs), which primarily report overall performance changes under mechanical strain, this work systematically identifies the dominant origin of electrical performance degradation through a stepwise electrical analysis encompassing the gate insulating layer, the semiconductor layer, and complete devices. Bottom-gate top-contact (BGTC) and bottom-gate bottom-contact (BGBC) devices were fabricated on rigid Si/SiO
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