Dynamically Tunable Pseudo-Enhancement-Load Inverters Based on High-Performance InAlZnO Thin-Film Transistors.

Hao Gu, Jingye Xie, Chuanlin Sun, Tingchen Yi, Yi Zhuo, Junchen Dong, Yudi Zhao, Kai Zhao

Abstract read

In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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1 · What the graph read from it

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Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

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0 citing papers in PubMed.

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5 · Who and what money

Authors and funding

8 authors.

Hao GuSchool of Information & Communication Engineering, Beijing Information Science and Technology University, Beijing 100101, China.

Jingye XieSchool of Integrated Circuits, Peking University, Beijing 100871, China.

Chuanlin SunSchool of Integrated Circuits, Peking University, Beijing 100871, China.

Tingchen YiSchool of Integrated Circuits, Peking University, Beijing 100871, China.

Yi ZhuoSchool of Integrated Circuits, Peking University, Beijing 100871, China.

Junchen DongSchool of Information & Communication Engineering, Beijing Information Science and Technology University, Beijing 100101, China.

Yudi ZhaoSchool of Information & Communication Engineering, Beijing Information Science and Technology University, Beijing 100101, China.

Kai ZhaoSchool of Information & Communication Engineering, Beijing Information Science and Technology University, Beijing 100101, China.ORCID 0000-0003-1241-6743

Funding

Beijing Nova Program 20230484256, 20240484536R&D Program of Beijing Municipal Education Commission KM202311232011

6 · The paper itself

Abstract

Oxide transistors have attracted significant interest in the field of integrated circuits (ICs). Among various oxide semiconductors, InAlZnO (IAZO) stands out as a promising candidate due to its potential for high mobility and excellent stability. In this work, we fabricate high-performance IAZO transistors with a field-effect mobility of 56.60 cm

Indexed as

InAlZnO transistorsintegrated circuitsinvertervoltage gain

Identifiers

PMID41677504

DOI10.3390/nano16030153

PMCPMC12899744

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.