Evidence map›Paper›PMID 41662487›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026

Low-Voltage and High-k Properties of Bilayer HZO Capacitors at the Morphotropic Phase Boundary for Next-Generation Memory Applications.

Junseok Kim, Hyeonjung Park, Changwoo Han, Huiseong Shin, Myeongjae Choi, Changhwan Shin

Abstract read
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Junseok KimSchool of Electrical Engineering, Korea University, Seoul, Republic of Korea.
Hyeonjung ParkDepartment of Electrical and Computer Engineering, Sungkyunkwan University College of Engineering, Seoul, Republic of Korea.
Changwoo HanSchool of Electrical Engineering, Korea University, Seoul, Republic of Korea.
Huiseong ShinSchool of Electrical Engineering, Korea University, Seoul, Republic of Korea.
Myeongjae ChoiSchool of Semiconductor System Engineering, Korea University, Seoul, Republic of Korea.
Changhwan ShinSchool of Electrical Engineering, Korea University, Seoul, Republic of Korea.ORCID https://orcid.org/0000-0001-6057-3773

Funding

K-CHIPS (Korea Collaborative & High-tech Initiative for Prospective Semiconductor Research) 02305570K-CHIPS (Korea Collaborative & High-tech Initiative for Prospective Semiconductor Research) 2410012306K-CHIPS (Korea Collaborative & High-tech Initiative for Prospective Semiconductor Research) 25069-15FCMinistry of Trade, Industry & EnergyNational Research Foundation of Korea RS-2023-00260527
6 · The paper itself

Abstract

We report the phase stabilization and capacitance enhancement of electric-field-treated Hf

Indexed as

antiferroelectricity/ferroelectricityhigh‐k dielectriclow‐powermorphotropic phase boundaryphase transition

Identifiers

PMID41662487
PMCPMC13088279

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.