Evidence map›Paper›PMID 41651810›Full record

ArticleLight, science & applications2026

Plasmonic nanocavity-enabled universal detection of layer-breathing vibrations in two-dimensional materials.

Heng Wu, Miao-Ling Lin, Sen Yan, Lin-Shang Chen, Zhong-Jie Wang, Yi-Fei Zhang, Ti-Ying Zhu, Zheng-Yu Su, Jun Wang, Xue-Lu Liu and 5 more

Abstract read
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In one paragraph

Article in Light, science & applications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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0citing papers in PubMed
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1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

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Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

15 authors.

Heng Wu *State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.ORCID http://orcid.org/0000-0002-2582-6322
Miao-Ling Lin *State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Sen YanState Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China.
Lin-Shang ChenState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Zhong-Jie WangState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Yi-Fei ZhangState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Ti-Ying ZhuState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Zheng-Yu SuState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Jun WangState Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China.
Xue-Lu LiuState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.ORCID http://orcid.org/0000-0001-9156-6760
Zhong-Ming WeiState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.ORCID http://orcid.org/0000-0002-6237-0993
Yan-Meng ShiState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.ORCID http://orcid.org/0000-0002-5648-0328
Xiang WangState Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China.ORCID http://orcid.org/0000-0003-1937-0725
Bin RenState Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China.ORCID http://orcid.org/0000-0002-9821-5864
Ping-Heng TanState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China. phtan@semi.ac.cn.ORCID http://orcid.org/0000-0001-6575-1516

Funding

National Natural Science Foundation of China (National Science Foundation of China) 12322401
6 · The paper itself

Abstract

Conventional Raman spectroscopy faces inherent limitations in detecting interlayer layer-breathing (LB) vibrations with inherently weak electron-phonon coupling or Raman inactivity in two-dimensional materials, hindering insights into interfacial coupling and stacking dynamics. Here, we demonstrate a universal plasmon-enhanced Raman spectroscopy strategy using gold or silver nanocavities to strongly enhance and detect LB modes in multilayer graphene, hBN, and their van der Waals heterostructures. Plasmonic nanocavities even modify the linear and circular polarization selection rules of the LB vibrations. By developing an electric-field-modulated interlayer bond polarizability model, we quantitatively explain the observed intensity profiles and reveal the synergistic roles of localized plasmonic field enhancement and interfacial polarizability modulation. This model successfully describes the behavior of plasmon-enhanced LB vibrations across different material systems and nanocavity geometries. This work not only overcomes traditional detection barriers but also provides a quantitative framework for probing interlayer interactions, offering a versatile platform for investigating hidden interfacial phonons and advancing the characterization of layered quantum materials.

Identifiers

PMID41651810
PMCPMC12880968

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